Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRF530 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 160 | 14 | 88 |
TO-220AB |
|
STD2NK60Z | N-CHANNEL 600V - 7.2? - 1.4A IPAK Zener-Protected SuperMESH™ MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 7200 | 1.4 | 45 |
|
|
FDS3512 | 80V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 50 | 4 | 2.5 |
SOIC-8 |
|
IRF7603 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 600 | 35 | 5.6 | 1.8 |
|
|
IXFV110N10P | PolarHT HiPerFET Power MOSFET | ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 110 | 480 |
|
|
Si4943CDY | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | - | 27.5 | 16 | 8 | 3.1 |
SOIC-8 |
|
BUZ30AH3045A | SIPMOS™ Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 200 | - | - | - | - | 130 | 21 | 125 |
TO-263-3 |
|
Si4686DY | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 11 | 7.8 | 18.2 | 5.2 |
SOIC-8 |
|
IRFP460C | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 200 | 20 | 235 |
TO-3PN |
|
STI30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) I2PAK | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
|
|
TSM8N50CH | N-канальный MOSFET транзистор, 500 В, 7.2 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 7.2 | 89 |
|
|
STW9N150 | N-channel 1500 V - 1.8 ? - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 1800 | 8 | 320 |
|
|
ZVN3320F | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 200 | - | - | - | - | 25000 | 0.06 | 0.33 |
SOT-23-3 |
|
IRL2505L | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 8 | 104 | 200 |
TO-262 |
|
STV240N75F3 | N-channel 75 V - 2.3 m? - 240 A - PowerSO-10 STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.3 | 240 | 300 |
|
|
IRF840AL | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 8 | 125 |
TO-262 |
|
STF23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-220FP FDmesh™ II Power MOSFET (with fast diode) | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 35 |
|
|
FQI6N25 | 250V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 820 | 5.5 | 63 |
|
|
IRFIZ34N | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 40 | 21 | 31 |
TO-220 |
|
ZVN0124A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 240 | - | - | - | - | 16000 | 0.16 | 0.7 |
TO-92 |