Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si8435DB | P-Channel 1.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 48 | - | 40 | 34 | - | 10 | 6.25 |
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| BUK9Y19-55B | N-channel TrenchMOS logic level FET |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | 16.3 | - | 46 | 85 |
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| SiA914DJ | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 62 | - | 52 | 43 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| Si3981DV | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 306 | - | 210 | 146 | - | 1.6 | 0.8 |
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| STT3PF20V | P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | 200 | 140 | - | 2.2 | 1.6 |
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| DMP2004DMK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.55 | 0.5 |
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| Si1300BDL | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 1.08 | 85 | - | 0.4 | 0.2 |
SC70-3 |
| FDG313N | Digital FET, N-Channel |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 450 | 350 | - | 0.95 | 0.75 |
SC70-6 |
| IRF7401 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 30 | 22 | - | 8.7 | 2.5 |
SOIC-8 |
| SiA813DJ | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | 153 | - | 109 | 78 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| NTHD5903 | Power MOSFET ?20 V, ?3.0 A, Dual P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 130 | - | -3 | 2.1 |
ChipFET_1206-8 |
| IRF7425 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 13 | 8.2 | - | 15 | 2.5 |
SOIC-8 |
| ZXMN2A01F | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 120 | - | 2.2 | 0.806 |
SOT-23-3 |
| BUK9Y3R0-40E | N-канальный MOSFET-транзистор, 40 В, совместимый с логическим уровнем сигналов и выполненный в корпусе LFPAK-56 |
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NXP |
MOSFET |
N | 1 | 40 | - | - | - | 3 | - | 100 | 194 |
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| Si1065X | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 158 | - | 131 | 108 | - | 1.18 | 0.236 |
SC89-6 |
| NTLTS3107P | Power MOSFET -20 V, -8.3 A, Single P-Channel, Micro8 Leadless Package |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 26.2 | - | - | 12.2 | - | -8.3 | 1.6 |
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| IRLML6401 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 50 | - | 4.3 | 1.3 |
SOT-23-3 |
| NTLGD3502N | Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 50 | - | 4.3 | 1.74 |
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| FDV303N | Digital FET , N-Channel |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 440 | 330 | - | 0.68 | 0.35 |
SOT-23-3 |
| 2N7002VA | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | - | 0.28 | 0.25 |
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