Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| PSMN015-110P | N-канальный TrenchMOS™ транзистор со стандартным уровнем FET |
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NXP |
MOSFET |
N | 1 | 110 | - | - | - | - | 12 | 75 | 300 |
TO-220AB |
| FCH043N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 75 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 43 | 75 | 592 |
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| FDB8444 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.9 | 70 | 167 |
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| STP21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 140 |
TO-220 |
| Si7450DP | N-Channel 200-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 65 | 3.2 | 1.9 |
PowerPAK_SO-8 |
| RFD14N05SM | N-Channel Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | - | 100 | 14 | 48 |
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| BSC039N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 3.9 | 100 | 69 |
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| Si1902DL | Dual N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 560 | 320 | - | 0.6 | 0.27 |
SC70-6 |
| STP8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 100 |
TO-220 |
| IPD90N06S4-07 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 5.7 | 90 | 79 |
TO-252 |
| IRLI540G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 77 | 17 | 48 |
TO-220F |
| FDMA1028NZ | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 37 | - | 3.7 | 1.4 |
MicroFET |
| IRLR8103V | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 10.5 | 9 | 91 | 89 |
D-PAK |
| STB75NF20 | N-channel 200V - 0.028? - 75A - D2PAK Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 190 |
D2-PAK |
| IRLU8743PbF | 30V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 3 | 2.4 | 160 | 135 |
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| NTP75N03R | Power MOSFET 75 Amps, 25 Volts N?Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 8.1 | 5.6 | 75 | 2.08 |
TO-220 |
| IRFI720GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 2.6 | 30 |
TO-220F |
| IRFSL3306PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 4.2 | 75 | 230 |
TO-262 |
| STD6NF10 | N-channel 100 V, 0.22 ?, 6 A, DPAK low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 220 | 6 | 30 |
D-PAK |
| NTD5807N | Power MOSFET 40 V, 23 A, Single N?Channel, DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 29 | 20 | 23 | 33 |
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