Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDMA510PZ | -20V Single P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 20 | 46 | - | 34 | 27 | - | 7.8 | 2.4 |
MicroFET |
| STC5NF20V | N-channel 20V - 0.030? - 5A - TSSOP8 2.7V-drive STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 20 | - | - | 30 | 37 | - | 5 | 1.5 |
TSSOP-8 |
| Si8451DB | P-Channel 1.5 V Rated MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 101 | - | 80 | 65 | - | 10.8 | 13 |
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| SiA912DJ | Dual N-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 12 | 51 | - | 39 | 33 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| BUK9Y40-55B | N-channel TrenchMOS logic level FET |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | 34 | - | 26 | 59 |
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| 2N7002V | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | - | 0.28 | 0.25 |
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| Si3951DV | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 164 | 92 | - | 2.7 | 2 |
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| TSM2301BCX | P-канальный MOSFET транзистор, -20 В, -2.8 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 190 | 150 | - | 100 | - | -2.8 | 0.9 |
SOT-23-3 |
| IRF7233 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 20 | - | 9.5 | 2.5 |
SOIC-8 |
| FDS6572A | 20V N-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 4 | - | 16 | 2.5 |
SOIC-8 |
| Si1056X | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 93 | - | 82 | 74 | - | 1.32 | 0.236 |
SC89-6 |
| SiA413DJ | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 36 | - | 28 | 24 | - | 12 | 19 |
PowerPAK SC70-6 |
| TSM4426CS | N-канальный MOSFET транзистор, 20 В, 8 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 200 | 40 | - | 30 | - | 8 | 2.5 |
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| IRF7404 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 60 | 40 | - | 6.7 | 2.5 |
SOIC-8 |
| IRLS640A | Advanced Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 180 | - | 9.8 | 40 |
TO-220F |
| BSP110 | N-channel enhancement mode field-effect transistor |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | 5000 | - | 520 | 6.25 |
SOT-223-4 |
| Si3590DV | N- and P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 30 | - | - | 235 | 135 | - | 1.7 | 0.83 |
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| IRF7501 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 200 | 135 | - | 2.4 | 1.2 |
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| Si5406CDC | N-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 12 | 21 | - | 18 | 16 | - | 6 | 5.7 |
ChipFET_1206-8 |
| NTD32N06 | Power MOSFET 32 Amps, 60 Volts, N?Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 32 | 93.75 |
D-PAK |
