Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STB80NF10 | N-channel 100V - 0.012? - 80A - D2PAK Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 80 | 300 |
D2-PAK |
| STW11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-247 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 150 |
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| IRF737LCPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 300 | - | - | - | - | 750 | 6.1 | 74 |
TO-220AB |
| IRFB4233PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 230 | - | - | - | - | 37 | 56 | 370 |
TO-220AB |
| STD95N4F3 | N-channel 40V - 5.4m? - 80A - DPAK STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
D-PAK |
| FQP7N10L | 100V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 18 | 7.3 | 40 |
TO-220 |
| STW19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-247 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
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| FDD13AN06A0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.5 | 50 | 115 |
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| STP150N10F7 | N-канальный силовой транзистор MOSFET семейства STripFET™ VII DeepGATE™, 100 В, 90 А |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 4.5 | 90 | 250 |
TO-220 |
| STW19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-247 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
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| NDP10N62Z | N-канальный силовой MOSFET 10 А, 620 В, 0.65 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 620 | - | - | - | - | 650 | 10 | 125 |
TO-220AB |
| NCV8402D | Защищенные MOSFET-транзисторы для управления вторичными цепями |
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ON Semiconductor |
MOSFET |
N | 1 | 42 | - | - | - | - | 165 | 2 | 1.62 |
SOIC-8 |
| IRF2804S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 2.3 | 280 | 330 |
D2-PAK |
| STP33N65M2 | N-канальные силовые MOSFET-транзисторы семейства MDmesh M2 на 650 В, 24 А |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 140 | 24 | 190 |
TO-220 |
| FDD3670 | 100V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 22 | 34 | 83 |
TO-252 |
| STP12NM50FDFP | N-channel 500V - 0.32? - 12A - TO-220FP FDmesh™ Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 320 | 12 | 35 |
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| Si7138DP | N-Channel 60-V (D-S) Reduced Qgd, Fast Switching WFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 30 | 96 |
PowerPAK_SO-8 |
| HUF75545P3 | N-Channel, UltraFET Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 8.2 | 75 | 270 |
TO-220AB |
| TK8S06K3L | Силовой N-канальный MOSFET-транзистор для автомобильных приложений |
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Toshiba |
MOSFET |
N | 1 | 60 | - | - | - | - | 54 | 8 | 25 |
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| STB11NM60N | N-channel 600 V - 0.37 ? - 10 A - I2PAK - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
D2-PAK |
