Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si3911DV | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 240 | - | 163 | 115 | - | 1.8 | 0.83 |
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| TSM2301CX | P-канальный MOSFET транзистор, -20 В, -2.8 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 190 | - | 130 | - | -2.8 | 0.9 |
SOT-23-3 |
| BSH111 | N-channel enhancement mode field-effect transistor |
|
NXP |
MOSFET |
N | 1 | 55 | - | - | 2400 | 2300 | - | 335 | 0.83 |
SOT-23-3 |
| IRF7207 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 100 | 60 | - | 5.4 | 2.5 |
SOIC-8 |
| Si1058X | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 103 | 76 | - | 1.3 | 0.236 |
SC89-6 |
| SiA417DJ | P-Channel 8-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 33 | - | 26 | 19 | - | 12 | 19 |
PowerPAK SC70-6 |
| Si1970DH | Dual N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | 285 | 185 | - | 1.3 | 1.25 |
SC70-6 |
| NTHD4508N | Power MOSFET 20 V, 4.1 A, Dual N?Channel ChipFET |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 60 | - | 3 | 1.13 |
ChipFET_1206-8 |
| ZXMN2A01E6 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 120 | - | 3.1 | 1.7 |
SOT-23-6 |
| Si8904EDB | Bi-Directional N-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 30 | - | - | 48 | 37 | - | 3.8 | 1 |
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| IRF1902 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 170 | 85 | - | 4.2 | 2.5 |
SOIC-8 |
| BS108 | Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 |
|
ON Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | - | 0.25 | 0.35 |
TO-92 |
| Si5484DU | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 17 | 13 | - | 12 | 31 |
PowerPAK_ChipFET |
| NTD32N06L | Power MOSFET 32 Amps, 60 Volts Logic Level, N-Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 32 | 93.75 |
D-PAK |
| Si1069X | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 218 | 153 | - | 0.94 | 0.236 |
SC89-6 |
| NTLTD7900ZR2 | Power MOSFET 9 A, 20 V, Logic Level, N?Channel Micro8 Leadless |
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ON Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 21 | - | 9 | 3.2 |
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| STT5NF20V | N-CHANNEL 20V - 0.030 W - 5A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 20 | - | - | 37 | 30 | - | 5 | 1.6 |
SOT-23-6 |
| Si7409ADN | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | 25 | 1.5 | - | 7 | 1.5 |
PowerPAK_1212-8 |
| IRF7329 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 21 | 17 | - | 9.2 | 2 |
SOIC-8 |
| IRLML2502 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 80 | 45 | - | 4.2 | 1.3 |
SOT-23-3 |
