Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si6435ADQ | 30-V (D-S) Single |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 42 | 24 | 4.7 | 1.05 |
TSSOP-8 |
| IRF7705 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 30 | 18 | 8 | 1.5 |
TSSOP-8 |
| IRF9620PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3.5 | 40 |
TO-220AB |
| NTGS3455T1 | MOSFET ?3.5 Amps, ?30 Volts P?Channel TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 144 | 94 | -2.5 | 1 |
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| Si7911DN | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 75 | - | 54 | 40 | - | 4.2 | 1.3 |
PowerPAK_1212-8 |
| IRF5305 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 60 | 31 | 110 |
TO-220AB |
| DMP2240UDM | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | 180 | - | - | 92 | - | -2 | 0.6 |
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| IRFP9240 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 12 | 150 |
TO-247AC |
| Si9934BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | - | - | 44 | 28 | - | 4.8 | 1.1 |
SOIC-8 |
| IXTX120P20T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -200 | 30 | 30 | 30 | 30 | 30 | -120 | 1040 |
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| IXTH11P50 | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -500 | 750 | 750 | 750 | 750 | 750 | -11 | 300 |
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| STS2DPFS20V | P-CHANNEL 20V - 0.14 W - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE |
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STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | 250 | 200 | - | 2.5 | 2 |
SOIC-8 |
| IRF7304 | HEXFET Power MOSFETs Dual P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 140 | 90 | - | 4.3 | 2 |
SOIC-8 |
| BS250P | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
P | 1 | -45 | - | - | - | - | 14000 | -0.23 | 0.7 |
TO-92 |
| SUM110P04-05 | P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | - | 4.1 | 110 | 375 |
D2-PAK |
| IXTP32P05T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -50 | 39 | 39 | 39 | 39 | 39 | -32 | 83 |
TO-220 |
| MTB2P50E | Power MOSFET 2 Amps, 500 Volts P?Channel D2PAK |
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ON Semiconductor |
MOSFET |
P | 1 | 500 | - | - | - | - | 4500 | 2 | 75 |
D2-PAK |
| Si4459ADY | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 6.2 | 3.9 | 29 | 7.8 |
SOIC-8 |
| CSD25301W1015 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -20 | - | - | - | 62 | - | -2.2 | 1.5 |
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| IRLML5203 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 165 | 98 | 3 | 1.25 |
SOT-23-3 |
