Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFPC50A | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 580 | 11 | 180 |
TO-247AC |
| STW9NK70Z | N-CHANNEL 700V - 1W - 7.5A TO-247 Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1000 | 7.5 | 156 |
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| ZVN4310A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 360 | 0.9 | 0.85 |
TO-92 |
| STW120NF10 | N-channel 100V - 0.009? - 110A - TO-247 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
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| IRF840LC | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 8 | 125 |
TO-220AB |
| IRFIZ48N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 16 | 40 | 42 |
TO-220 |
| STI24NM65N | N-channel 650 V - 0.16 ? - 19 A - I2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
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| FQAF40N25 | 250V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 51 | 24 | 108 |
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| STD40N2LH5 | N-channel 25 V, 0.01 ?, 40 A, DPAK STripFET™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 10 | 40 | 35 |
D-PAK |
| IRF3415L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 42 | 43 | 200 |
TO-262 |
| STI19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - I2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
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| FQPF22N30 | 300V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 300 | - | - | - | - | 120 | 12 | 56 |
TO-220F |
| FCH104N60F_F085 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 37 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 104 | 37 | 357 |
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| PHK12NQ10T | N-канальный TrenchMOS™ транзистор со стандартным уровнем FET |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 23.7 | 11.6 | 8.9 |
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| SUD50N10-18P | N-Channel 100-V (D-S), 175°C MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 50 | 136.4 |
D-PAK |
| STB3NK60Z | N-CHANNEL 600V - 3.3W - 2.4A D2PAK Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 3300 | 2.4 | 45 |
D2-PAK |
| STB130NS04ZB-1 | N-channel clamped - 7 mмОм - 80A Fully protected mesh overlay™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 33 | - | - | - | - | 7 | 80 | 300 |
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| IPB60R600C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 540 | 7.3 | 63 |
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| HUF75639P3 | N-Channel UltraFET Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 56 | 200 |
TO-220AB |
| IRL510PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 540 | 5.6 | 43 |
TO-220AB |
