Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IPP80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-220 |
| Si6993DQ | Dual P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 38 | 24 | 3.6 | 0.83 |
TSSOP-8 |
| IRFR9024N | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 11 | 38 |
D-PAK |
| IRF9540PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 19 | 150 |
TO-220AB |
| Si8413DB | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 52 | 39.3 | - | 4.8 | 1.47 |
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| IRF6218 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 150 | 27 | 250 |
TO-220AB |
| DMP2123L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
| IRFI9Z34G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 140 | 12 | 42 |
TO-220F |
| Si1039X | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 230 | - | 180 | 140 | - | 0.95 | 0.17 |
SC89-6 |
| IXTR32P60P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -600 | 385 | 385 | 385 | 385 | 385 | -18 | 310 |
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| IRF7324 | HEXFET Power MOSFETs Dual P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 26 | 18 | - | 9 | 2 |
SOIC-8 |
| ZXMP6A18K | 60V P-channel enhancement mode MOSFET |
|
Zetex |
MOSFET |
P | 1 | -60 | - | - | - | 80 | 55 | -10.4 | 4.3 |
D-PAK |
| IXTP120P065T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -65 | 10 | 10 | 10 | 10 | 10 | -120 | 298 |
TO-220 |
| Si4947ADY | Dual P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 105 | 62 | 3 | 1.2 |
SOIC-8 |
| IRLR9343 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | 170 | 105 | 20 | 79 |
D-PAK |
| IRF9Z20 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 200 | 9.7 | 40 |
TO-220AB |
| NTHS5443 | Power MOSFET ?20 V, ?4.9 A, P?Channel ChipFET |
|
ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 56 | - | -4.9 | 2.5 |
ChipFET_1206-8 |
| DMP3098LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 98 | 56 | -4.4 | 1.8 |
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| IRFR9220PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3.6 | 42 |
D-PAK |
| Si2333DS | P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 46 | - | 33 | 25 | - | 4.1 | 0.75 |
SOT-23-3 |
