Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM4433DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -3.9 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 150 | 110 | - | 90 | - | -3.9 | 2.5 |
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IRF9Z24NS | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 12 | 45 |
D2-PAK |
|
IRF9540S | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 19 | 150 |
D2-PAK |
|
NTGS3136P | Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 41 | - | - | 25 | - | -5.1 | 1.25 |
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Si8401DB | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 80 | 57 | - | 3.6 | 1.47 |
|
|
IRF6217 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 24000 | 0.7 | 2.5 |
SOIC-8 |
|
IRFI9Z34GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 140 | 12 | 42 |
TO-220F |
|
DMP2130L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
|
Si1051X | P-Channel 8-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 117 | - | 106 | 91 | - | 1.2 | 0.236 |
SC89-6 |
|
IXTK32P60P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -600 | 350 | 350 | 350 | 350 | 350 | -32 | 890 |
|
|
IRF7316QPBF | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 98 | 58 | 4.9 | 2 |
SOIC-8 |
|
STD10PF06 | P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAK STripFET™ II POWER MOSFET | STMicroelectronics |
MOSFET |
P | 1 | 60 | - | - | - | - | 180 | 10 | 40 |
D-PAK |
|
ZXMP7A17K | 70V P-channel enhancement mode MOSFET | Zetex |
MOSFET |
P | 1 | -70 | - | - | - | 250 | 160 | -5.7 | 4.17 |
D-PAK |
|
IXTH120P065T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -65 | 10 | 10 | 10 | 10 | 10 | -120 | 298 |
|
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MMDF2P02E | Power MOSFET 2 Amps, 25 Volts P?Channel SO?8, Dual | ON Semiconductor |
MOSFET |
P | 2 | 25 | - | - | - | 300 | 190 | 2.5 | 2 |
SOIC-8 |
|
Si4971DY | Dual P-Channel 25-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 30 | - | - | - | - | 21 | 5.4 | 1.1 |
SOIC-8 |
|
IRF7406 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 70 | 45 | 5.8 | 2.5 |
SOIC-8 |
|
IRF9Z24 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 280 | 11 | 60 |
TO-220AB |
|
NTJD1155L | Power MOSFET 8 V, 1.3 A, High Side Load Switch with Level?Shift, P?Channel SC?88 | ON Semiconductor |
MOSFET |
P | 2 | 8 | 260 | - | - | 130 | - | 1.3 | 0.4 |
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SiA411DJ | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 45 | - | 33 | 25 | - | 12 | 19 |
PowerPAK SC70-6 |