Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTP75N06 | Power MOSFET 75 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.2 | 75 | 214 |
TO-220 |
| IRFI730GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1000 | 3.7 | 35 |
TO-220F |
| IRFSL33N15D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 56 | 33 | 3.8 |
TO-262 |
| 2N7002A | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.25 |
SOT-23-3 |
| STE180NE10 | N-channel 100V - 4.5m? - 180A - ISOTOP STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 4500 | 180 | 360 |
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| FC40SA50FK | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 84 | 40 | 430 |
SOT-227 |
| IRF7451 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 90 | 3.6 | 2.5 |
SOIC-8 |
| FDB2614 | 200V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 22.9 | 62 | 260 |
D2-PAK |
| STP95N4F3 | N-channel 40V - 5.4m? - 80A - TO-220 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
TO-220 |
| STB8NM60D | N-CHANNEL 600V - 0.9? - 8A - D2PAK Fast Diode MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
| TK31Z60X | N-канальныq MOSFET транзистор семейства DTMOS IV-H с рабочим напряжением 600 В |
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Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 88 | 30.8 | 230 |
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| FQP24N08 | 80V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 48 | 24 | 75 |
TO-220 |
| Si3454ADV | 30-V (D-S) Single |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 70 | 48 | 3.4 | 1.14 |
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| IPB021N06N3G | OptiMOS™ 3 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.8 | 120 | 250 |
TO-263-3 |
| STI24NM65N | N-channel 650 V - 0.16 ? - 19 A - I2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
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| TSM4NB50CP | Силовой N-канальный MOSFET транзистор, 500 В, 3 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 2700 | 3 | 45 |
TO-252 |
| IRFI9620GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3 | 30 |
TO-220F |
| FDU3N40 | 400V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 2800 | 2 | 30 |
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| IRFR5410 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 205 | 13 | 66 |
D-PAK |
| CSD16321Q5 | N-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 2.1 | - | 100 | 3.1 |
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