Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| DMN5010VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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| Si1016X | Complementary N- and P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET N+P |
N+P | 2 | 20 | - | - | - | - | - | - | 0.25 |
SC89-6 |
| NTZD3152P | Small Signal MOSFET ?20 V, ?430 mA, Dual P?Channel with ESD Protection, SOT?563 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 1000 | - | - | 500 | - | -0.43 | 0.25 |
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| Si1022R | N-Channel Enhancement-Mode MOSFET Transistor |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 3000 | 1250 | 0.33 | 0.25 |
SC75A |
| DMN5L06VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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| DMN5L06VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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| Si1012X | N-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 1250 | - | 850 | 700 | - | 0.5 | 0.25 |
SC89-3 |
| DMN2004VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.25 |
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| NTJD5121N | Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 |
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ON Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 290 | - | 0.295 | 0.25 |
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| 2N7002A | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.25 |
SOT-23-3 |
| Si1902DL | Dual N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 560 | 320 | - | 0.6 | 0.27 |
SC70-6 |
| Si1539DL | Complementary 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 30 | - | - | - | 1.5 | 800 | 0.42 | 0.27 |
SC70-6 |
| Si1553DL | Complementary 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 1.4 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| Si1903DL | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 1400 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P?Channel, SC?88 ESD Protection |
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ON Semiconductor |
MOSFET |
P | 2 | -8 | 510 | - | - | 220 | - | -0.775 | 0.27 |
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| NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
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| 2N7002W | Small Signal MOSFET 60 V, 340 mA, Single, N?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1330 | 1190 | 0.31 | 0.28 |
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| Si1302DL | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 600 | 410 | 0.6 | 0.28 |
SC70-3 |
| Si1330EDL | N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 1400 | 1000 | 0.24 | 0.28 |
SC70-3 |
| NTS4409N | Small Signal MOSFET 25 V, 0.75 A, Single, N?Channel, ESD Protection, SC?70/SOT?323 |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 299 | 249 | - | 0.7 | 0.28 |
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