Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
2N7002E | Small Signal MOSFET 60 V, 310 mA, Single, N?Channel, SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1100 | 860 | 0.26 | 0.3 |
SOT-23-3 |
|
Si1031R | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 15000 | - | 12000 | 8000 | - | 0.155 | 0.3 |
SC75A |
|
BSS84DW | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.3 |
|
|
BSS84 | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | 10000 | -0.13 | 0.3 |
SOT-23-3 |
|
Si1032X | N-Channel 1.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | 9000 | - | 7000 | 5000 | - | 0.2 | 0.3 |
SC89-3 |
|
Si1032R | N-Channel 1.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | 9000 | - | 7000 | 5000 | - | 0.2 | 0.3 |
SC75A |
|
BSS138W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 1400 | 0.2 | 0.3 |
SOT-323 |
|
BSS138 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3500 | 0.2 | 0.3 |
SOT-23-3 |
|
NDS7002A | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 1200 | 0.28 | 0.3 |
SOT-23-3 |
|
BS870 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3500 | 0.25 | 0.3 |
SOT-23-3 |
|
NTA7002N | Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 | ON Semiconductor |
MOSFET |
N | 1 | 300 | 242 | - | - | 1400 | - | 0.154 | 0.3 |
|
|
2N7002E | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | 2000 | 1600 | 0.24 | 0.3 |
SOT-23-3 |
|
NTA4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?75 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 0.915 | 0.3 |
|
|
MMBF170 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | 5300 | 5000 | 0.5 | 0.3 |
SOT-23-3 |
|
FDG6303N | Dual N-Channel, Digital FET | Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 440 | 340 | - | 0.5 | 0.3 |
SC70-6 |
|
NTE4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?89 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 0.915 | 0.3 |
|
|
2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 4400 | 0.115 | 0.3 |
SOT-23-3 |
|
NTA4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?75 | ON Semiconductor |
MOSFET |
P | 1 | 20 | 490 | - | - | 260 | - | 0.76 | 0.301 |
|
|
NTE4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?89 | ON Semiconductor |
MOSFET |
P | 1 | 20 | 490 | - | - | 260 | - | 0.76 | 0.301 |
|
|
NTS4101P | Power MOSFET ?20 V, ?1.37 A, Single P?Channel, SC?70 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 83 | - | -1.37 | 0.329 |
|