Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| DMN32D2LDF | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 30 | 2200 | - | - | - | - | 0.4 | 0.28 |
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| NTS4173P | Power MOSFET ?30 V, ?1.3 A, Single P?Channel, SC?70 |
|
ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 90 | -1.2 | 0.29 |
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| NTS2101P | Power MOSFET ?8.0 V, ?1.4 A, Single P?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 117 | - | - | 65 | - | -1.4 | 0.29 |
SOT-23-3 |
| Si1305EDL | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| Si1305DL | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| Si1307EDL | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 480 | - | 350 | 240 | - | 0.85 | 0.29 |
SC70-3 |
| Si1303EDL | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
| Si1303DL | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
| NTS4172N | Power MOSFET 30 V, 1.7 A, Single N?Channel, SC?70 |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 64 | 58 | 1.6 | 0.294 |
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| NTS4172N | Power MOSFET 30 V, 1.7 A, Single N?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 64 | 58 | 1.6 | 0.294 |
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| FDG6335N | 20V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 180 | - | 0.7 | 0.3 |
SC70-6 |
| 2N4416A | N-CHANNEL J-FET |
|
Microsemi |
MOSFET |
N | 1 | -35 | - | - | - | - | - | 10 | 0.3 |
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| NTA4001N | Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 1500 | - | 0.238 | 0.3 |
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| FDG6301N | Dual N-Channel, Digital FET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 3700 | 2600 | 2600 | 0.22 | 0.3 |
SC70-6 |
| FDG6317NZ | Dual 20v N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | 82 | - | - | - | 300 | 0.7 | 0.3 |
SC70-6 |
| TSM2N7002KDCU6 | N-канальный MOSFET транзистор, 60 В, 0.3 А |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.3 |
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| TSM2N7002KCU | N-канальный MOSFET транзистор, 60 В, 0.3 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.3 |
SOT-323 |
| TSM2N7002KCX | N-канальный MOSFET транзистор, 60 В, 0.3 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.3 |
SOT-23-3 |
| 2N7002K | Small Signal MOSFET 60 V, 380 mA, Single, N?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1330 | 1190 | 0.32 | 0.3 |
SOT-23-3 |
| Si1031X | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 15000 | - | 12000 | 8000 | - | 0.155 | 0.3 |
SC89-3 |
