Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si2306BDS | N-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 52 | 38 | 3.16 | 0.75 |
SOT-23-3 |
| Si2304BDS | N-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 80 | 55 | 2.6 | 0.75 |
SOT-23-3 |
| FDG313N | Digital FET, N-Channel |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 450 | 350 | - | 0.95 | 0.75 |
SC70-6 |
| Si2307BDS | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 105 | 63 | 2.5 | 0.75 |
SOT-23-3 |
| BSH103 | N-channel enhancement mode MOS transistor |
|
NXP |
MOSFET |
N | 1 | 30 | 600 | - | 500 | 400 | - | 0.85 | 0.75 |
SOT-23-3 |
| Si2343DS | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 68 | 43 | 3.1 | 0.75 |
SOT-23-3 |
| Si2319DS | P-Channel 40-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 100 | 65 | 2.3 | 0.75 |
SOT-23-3 |
| Si2315BDS | P-Channel, 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 71 | - | 50 | 40 | - | 3 | 0.75 |
SOT-23-3 |
| Si2333DS | P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 46 | - | 33 | 25 | - | 4.1 | 0.75 |
SOT-23-3 |
| Si2325DS | P-Channel 150-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 1000 | 0.53 | 0.75 |
SOT-23-3 |
| Si2327DS | P-Channel 200-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1900 | 0.38 | 0.75 |
SOT-23-3 |
| Si2323DS | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 54 | - | 41 | 31 | - | 3.7 | 0.75 |
SOT-23-3 |
| FDG311N | N-Channel 2.5V Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 82 | - | 1.9 | 0.75 |
SC70-6 |
| CSD75205W1015 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком |
|
Texas Instruments |
MOSFET |
P | 2 | -20 | 145 | - | - | 95 | - | -1.2 | 0.75 |
|
| ZXMP2120E5 | 200V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 28000 | -0.122 | 0.75 |
SOT-23-5 |
| TSM2312CX | N-канальный MOSFET транзистор, 20 В, 4.9 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 51 | 40 | - | 33 | - | 4.9 | 0.75 |
SOT-23-3 |
| FDG315N | N-Channel Logic Level PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 130 | 100 | 2 | 0.75 |
SC70-6 |
| Si2318DS | N-Channel 40-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 40 | - | - | - | 45 | 36 | 3 | 0.75 |
SOT-23-3 |
| Si2312BDS | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | 36 | - | 30 | 25 | - | 3.9 | 0.75 |
SOT-23-3 |
| ZVN4424A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 240 | - | - | - | - | - | 0.26 | 0.75 |
TO-92 |
