Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| TSM2611EDCX6 | Сдвоенный N-канальный MOSFET транзистор, 20 В, 6 А, ESD защита |
|
Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | - | 28 | - | 20 | - | 6 | 0.83 |
|
| Si3812DV | N-Channel 20-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 160 | 100 | - | 2 | 0.83 |
|
| NTGD1100L | Power MOSFET 8 V, ±3.3 A, Load Switch with Level?Shift, P?Channel, TSOP?6 |
|
ON Semiconductor |
MOSFET |
P | 2 | 8 | 80 | - | - | 40 | - | 3.3 | 0.83 |
|
| Si6993DQ | Dual P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 38 | 24 | 3.6 | 0.83 |
TSSOP-8 |
| Si6926ADQ | Dual N-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | 35 | - | 29 | 24 | - | 4.1 | 0.83 |
TSSOP-8 |
| Si3851DV | P-Channel 30-V (D-S) Rated MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 298 | 165 | 1.6 | 0.83 |
|
| ZVN4306AV | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 60 | - | - | - | - | 220 | 1.1 | 0.85 |
TO-92 |
| ZVN4306A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 60 | - | - | - | - | 1000 | 1.1 | 0.85 |
TO-92 |
| ZVN4310A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 360 | 0.9 | 0.85 |
TO-92 |
| Si3442BDV | N-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 70 | 45 | - | 3 | 0.86 |
|
| Si3441BDV | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 98 | 70 | - | 2.45 | 0.86 |
|
| ZXMD63P03X | DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 270 | 185 | -2 | 0.87 |
MSOP-8 |
| ZXMD63P02X | DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 2 | -20 | - | - | 400 | 270 | - | -1.7 | 0.87 |
MSOP-8 |
| FQN1N50C | 500V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 4600 | 0.38 | 0.89 |
TO-92 |
| TSTSM2311CX | P-канальный MOSFET транзистор, -20 В, -4 А |
|
Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 85 | - | 55 | - | -4 | 0.9 |
SOT-23-3 |
| TSM2301CX | P-канальный MOSFET транзистор, -20 В, -2.8 А |
|
Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 190 | - | 130 | - | -2.8 | 0.9 |
SOT-23-3 |
| TSM2301BCX | P-канальный MOSFET транзистор, -20 В, -2.8 А |
|
Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 190 | 150 | - | 100 | - | -2.8 | 0.9 |
SOT-23-3 |
| DMN2100UDM | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | 56 | - | - | 32 | - | 3.3 | 0.9 |
|
| FDC6301N | Dual N-Channel , Digital FET |
|
Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 3800 | 3100 | - | 0.22 | 0.9 |
SSOT-6 |
| FDMA430NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 23.6 | - | 5 | 0.9 |
MicroFET |
