Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STP3NK90Z | N-CHANNEL 900V - 4.1W - 3A TO-220 Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 4100 | 3 | 90 |
TO-220 |
| STD3NK90Z | N-CHANNEL 900V - 4.1W - 3A DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 4100 | 3 | 90 |
D-PAK |
| STS1DNC45 | DUAL N-CHANNEL 450V - 4.1W - 0.4A SO-8 SuperMESH™ POWER MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 450 | - | - | - | - | 4100 | 0.4 | 1.6 |
SOIC-8 |
| TSM4N90CZ | Силовой N-канальный MOSFET транзистор, 900 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 123 |
TO-220 |
| TSM4N90CI | Силовой N-канальный MOSFET транзистор, 900 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 38.7 |
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| ZVN2110G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 4000 | 0.5 | 0.002 |
SOT-223-4 |
| ZVN2110A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 4000 | 0.32 | 0.7 |
TO-92 |
| TN2529 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 290 | - | - | - | 4000 | 4000 | 2.8 | 2 |
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| 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 60 | - | - | - | - | 4000 | 1.5 | 6.25 |
TO-39 |
| TN2524 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 240 | - | - | - | 4000 | 4000 | 2.8 | 1.6 |
SOT-89 |
| Si1025X | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC89-6 |
| Si1021R | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC75A |
| NDD02N60Z | N-канальный силовой MOSFET 2 А, 600 В, 4 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 4000 | 2.2 | 57 |
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| NDP02N60Z | N-канальный силовой MOSFET 2 А, 600 В, 4 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 4000 | 2.4 | 72 |
TO-220AB |
| NDF02N60Z | N-канальный силовой MOSFET 2 А, 600 В, 4 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 4000 | 2.4 | 24 |
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| TN0620 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 200 | - | - | - | - | 4000 | 1 | 1 |
TO-92 |
| ZVN4424Z | SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 240 | - | - | - | - | 4000 | 0.3 | 1 |
SOT-89 |
| ZVN4424G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 240 | - | - | - | - | 4000 | 0.5 | 2.5 |
SOT-223-4 |
| CPC3703C | N-канальный MOSFET транзистор с режимом истощения |
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Clare |
MOSFET |
N | 1 | 250 | 4000 | 4000 | 4000 | 4000 | 4000 | 0.36 | 1.6 |
SOT-89 |
| FQPF3N80C | 800V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 4000 | 3 | 39 |
TO-220F |
