Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| STP45NF06 | N-channel 60V - 0.022? - 38A TO-220 STripFETTM II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 235 | 38 | 80 |
TO-220 |
| Si3475DV | P-Channel 200-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1340 | 0.95 | 3.2 |
|
| STB30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET D2PAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 190 |
D2-PAK |
| FQP6N90C | 900V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1930 | 6 | 167 |
TO-220 |
| FDMS86150ET100 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 100 В, 128 А |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 4.85 | 128 | 187 |
Power 56 |
| IRF520VS | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 165 | 9.6 | 44 |
D2-PAK |
| FDD3680 | 100V N-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 32 | 25 | 68 |
TO-252 |
| STP190NF04 | N-channel 40V - 0.0039? - 120A STripFET™ III Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.9 | 120 | 310 |
TO-220 |
| SUP28N15-52 | N-Channel 150-V (D-S) 175°C MOSFET |
|
Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 42 | 28 | 120 |
TO-220 |
| TSM1N50CT | Силовой N-канальный MOSFET транзистор, 500 В, 0.5 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 5500 | 0.5 | 0.625 |
TO-92 |
| FDD10AN06A0 | N-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 9.4 | 50 | 135 |
TO-252 |
| IPB45N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.6 | 45 | 71 |
TO-263-3 |
| STP10NM65N | N-channel 650 V, 0.43 ?, 9 A MDmesh™ II Power MOSFET TO-220 |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 430 | 9 | 90 |
TO-220 |
| IRLZ44 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
TO-220AB |
| FCP11N60 | SuperFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 320 | 11 | 125 |
TO-220 |
| STB12NM50ND | N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D2-PAK |
| IRFIBE20GPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 6500 | 1.4 | 30 |
TO-220F |
| STP3HNK90Z | N-channel 900V - 0.35? - 3A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 3500 | 3 | 90 |
TO-220 |
| IRFU220N | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 600 | 5 | 43 |
|
| STP14NF12 | N-channel 120V - 0.16? - 14A - TO-220 low gate charge STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 120 | - | - | - | - | 160 | 14 | 60 |
TO-220 |
