Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STU90N4F3 | N-channel 40 V, 5.4 m?, 80 A, IPAK STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
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| PSMN4R0-30YL | N-channel TrenchMOS logic level FET |
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NXP |
MOSFET |
N | 1 | 30 | - | - | - | - | 2.72 | 99 | 69 |
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| TSM4N80CZ | Силовой N-канальный MOSFET транзистор, 800 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 4 | 123 |
TO-220 |
| STP23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-220 FDmesh™ II Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 150 |
TO-220 |
| IRFI9540GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 11 | 48 |
TO-220F |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 22 | 51 | 131 |
TO-220AB |
| 2N7228 | N-CHANNEL MOSFET |
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Microsemi |
MOSFET |
N | 1 | 500 | - | - | - | - | 415 | 12 | 150 |
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| IRF9Z24NS | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 12 | 45 |
D2-PAK |
| STP20NM60 | N-channel 600V - 0.25? - 20A - TO-220 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 250 | 20 | 192 |
TO-220 |
| IRFP31N50LPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 150 | 31 | 460 |
TO-247AC |
| STW11NK90Z | N-channel 900V - 0.82? - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 820 | 9.2 | 200 |
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| IRFZ44Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 13.9 | 51 | 80 |
TO-220AB |
| STP80NF06 | N-channel 60V - 0.0065? - 80A TO-220 STripFETTM II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 80 | 300 |
TO-220 |
| IRF734PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 450 | - | - | - | - | 1200 | 4.9 | 74 |
TO-220AB |
| STI19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - I2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
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| FDMS2734 | N-Channel UltraFET Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 105 | 14 | 78 |
Power 56 |
| IRFB4227PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 26 | 65 | 190 |
TO-220AB |
| STP90NF03L | N-channel 30V - 0.0056? -90A TO-220/I2PAK Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 5.6 | 90 | 150 |
TO-220 |
| FDD6530A | 20V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | - | 26 | 21 | 33 |
TO-252 |
| NDP06N62Z | N-канальный силовой MOSFET 6 А, 620 В, 0.98 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 620 | - | - | - | - | 980 | 6 | 113 |
TO-220AB |
