Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM3911DCX6 | Сдвоенный P-канальный MOSFET транзистор, -20 В, -2.2 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 300 | 200 | - | 140 | - | -2.2 | 1.15 |
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NTMS10P02R2 | Power MOSFET ?10 Amps, ?20 Volts P?Channel Enhancement?Mode Single SOIC?8 Package | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 12 | - | -10 | 2.5 |
SOIC-8 |
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SiA921EDJ | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | -20 | - | - | 80 | 48 | - | -4.5 | 7.8 |
PowerPAK SC70-6 |
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DMP2225L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 80 | - | -2.6 | 1.08 |
SOT-23-3 |
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CSD75204W15 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком | Texas Instruments |
MOSFET |
P | 2 | -20 | 140 | - | - | 80 | - | -3 | 0.7 |
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NTGS3443B | Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 65 | 45 | - | -3.7 | 1.25 |
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SiB457EDK | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | -20 | 60 | - | 40 | 29 | - | -9 | 13 |
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DMP2215L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 80 | - | -2.7 | 1.08 |
SOT-23-3 |
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CSD25401Q3 | P-Channel CICLON NexFET Power MOSFETs | Texas Instruments |
MOSFET |
P | 1 | -20 | - | - | - | 8.7 | - | -60 | 2.8 |
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ZXMD63P02X | DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 2 | -20 | - | - | 400 | 270 | - | -1.7 | 0.87 |
MSOP-8 |
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NTTS2P02R2 | Power MOSFET ?2.4 Amps, ?20 Volts Single P?Channel Micro8 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 100 | 70 | - | -2.4 | 0.78 |
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NTGS3441P | Power MOSFET ?20 V, ?3.16 A, Single P?Channel TSOP?6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 144 | 91 | - | -2.5 | 0.98 |
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DMP2160UW | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 120 | - | - | 75 | - | -1.5 | 0.35 |
SOT-323 |
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CSD25302Q2 | P-канальный силовой MOSFET NexFET™ | Texas Instruments |
MOSFET |
P | 1 | -20 | 71 | - | - | 39 | - | -5 | 2.4 |
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NTGS3441B | Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 59 | - | -3 | 1.1 |
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TSM9434CS | P-канальный MOSFET транзистор, -20 В, -6.4 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 60 | - | 40 | - | -6.4 | 2.5 |
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CSD75205W1015 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком | Texas Instruments |
MOSFET |
P | 2 | -20 | 145 | - | - | 95 | - | -1.2 | 0.75 |
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FDY2000PZ | -20V Dual P-Channel Specified PowerTrench® MOSFET | Fairchild Semiconductor |
MOSFET |
P | 2 | -20 | 2700 | 1600 | - | 1200 | - | -0.35 | 0.625 |
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ZXM62P03E6 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -20 | - | - | - | 230 | 150 | -1.5 | 0.625 |
SOT-23-6 |
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DMP2160UFDB | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 86 | - | - | 54 | - | -3.8 | 1.4 |
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