Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| MLD1N06CL | SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N?Channel DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 62 | - | - | - | - | - | 1 | 40 |
D-PAK |
| IRFR18N15D | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 125 | 18 | 110 |
D-PAK |
| STD1NK60 | N-CHANNEL 600V - 8? - 1A DPAK/IPAK SuperMESH™ MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8 | 1 | 30 |
D-PAK |
| STD5NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET DPAK, IPAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 5 | 96 |
D-PAK |
| IRFR110 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 540 | 4.3 | 25 |
D-PAK |
| FQD2N100 | 1000V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 1000 | - | - | - | - | 7100 | 1.6 | 50 |
D-PAK |
| FDD8878 | N-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | 15 | 40 | 40 |
D-PAK |
| IRFR3709Z | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 8.2 | 6.5 | 86 | 79 |
D-PAK |
| STD17NF25 | N-channel 250V - 0.14? - 17A - DPAK Low gate charge STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 140 | 17 | 90 |
D-PAK |
| IRLR3717 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 5.7 | 4.2 | 120 | 89 |
D-PAK |
| STD9NM50N | N-channel 500V - 0.47? - 7.5A - IPAK - DPAK Second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 470 | 7.5 | 70 |
D-PAK |
| PHD9NQ20T | N-канальный TrenchMOS™ транзистор |
|
NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 8.7 | 88 |
D-PAK |
| NTD5807N | Power MOSFET 40 V, 23 A, Single N?Channel, DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 29 | 20 | 23 | 43 |
D-PAK |
| IRFR9214PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 250 | - | - | - | - | 3000 | 2.7 | 50 |
D-PAK |
| FQD18N20V2 | 200V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 15 | 2.5 |
D-PAK |
| STD60N3LH5 | N-channel 30 V, 0.0072 ?, 48 A - DPAK STripFET™ V Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 7.6 | 48 | 60 |
D-PAK |
| STD16NF25 | N-channel 250V - 0.195? - 13A - DPAK Low gate charge STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 90 |
D-PAK |
| STD60NF06 | N-channel 60V - 0.014? - 60A - DPAK STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 14 | 60 | 110 |
D-PAK |
| IRLR8256PbF | 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 6.7 | 4.2 | 81 | 63 |
D-PAK |
| STD12NM50N | N-channel 500 V, 0.29 ?, 11 A MDmesh™ II Power MOSFET DPAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D-PAK |
