Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFBC40PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.2 | 125 |
TO-220AB |
| FCA16N60 | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 220 | 16 | 167 |
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| IRFR3504Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 9 | 42 | 90 |
D-PAK |
| STP45NF3LLFP | N-channel 30V - 0.014? - 45A TO-220FP STripFET II™ power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | 16 | 14 | 27 | 25 |
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| STP7NK80ZFP | N-channel 800V - 1.5? - 5.2A - TO-220FP Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 1500 | 5.2 | 30 |
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| Si3483CDV | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 44 | 27 | 8 | 4.2 |
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| FQP2N80 | 800V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 4900 | 2.4 | 85 |
TO-220 |
| IRF530NS | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 90 | 17 | 3.8 |
D2-PAK |
| STB200NF03 | N-channel 30V - 0.0032? - 120A - D2PAK/I2PAK STripFET™ III Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.2 | 120 | 300 |
D2-PAK |
| STW30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 190 |
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| FDMC86570LET60 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 60 В, 87 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 6.5 | 4.3 | 87 | 65 |
Power 33 |
| SUP33N20-60P | N-Channel 200-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 49 | 33 | 156 |
TO-220 |
| IPB80N06S4L-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 5.4 | 3.9 | 80 | 107 |
TO-263-3 |
| Si5938DU | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 455 | - | 37 | 32 | - | 6 | 8.3 |
PowerPAK_ChipFET |
| TSM1NB60CH | Силовой N-канальный MOSFET транзистор, 600 В, 0.5 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 10000 | 0.5 | 39 |
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| STP11NM60N | N-channel 600 V - 0.37 ? - 10 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
TO-220 |
| FQPF19N20 | 200V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 11.8 | 50 |
TO-220F |
| IRF9510 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 4 | 43 |
TO-220AB |
| IRLB4030PbF | 100V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.6 | 3.4 | 180 | 370 |
TO-220AB |
| IRLU7807Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 18.2 | 13.8 | 43 | 40 |
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