Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF5850 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 220 | 135 | - | 2.2 | 0.96 |
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| STS3DPF60L | DUAL P-CHANNEL 60V - 0.10 ? - 3A SO-8 STripFET™ MOSFET |
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STMicroelectronics |
MOSFET |
P | 2 | 60 | - | - | - | 130 | 100 | 3 | 2 |
SOIC-8 |
| BSS84DW | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.3 |
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| SUD50P10-43L | P-Channel 100-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | 40 | 36 | 37.1 | 136 |
D-PAK |
| MTB50P03HDL | Power MOSFET 50 Amps, 30 Volts, Logic Level P?Channel D2PAK |
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ON Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | - | - | 50 | 125 |
D2-PAK |
| Si4483EDY | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 11.5 | 7 | 10 | 1.5 |
SOIC-8 |
| FDME910PZT | P-канальные MOSFET-транзисторы PowerTrench® -20В, -8А |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -20 | 45 | 31 | - | 24 | - | -8 | 2.1 |
MicroFET |
| IRFU9024N | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 11 | 38 |
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| IRFD9024 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 280 | 1.6 | 1.3 |
HEXDIP |
| SiB413DK | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 119 | 62 | - | 9 | 13 |
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| SQJ461EP | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
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Vishay |
MOSFET |
P | 1 | -60 | - | - | - | 21 | 16 | -30 | 83 |
PowerPAK_SO-8 |
| Si7145DP | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | -30 | - | - | - | 3 | 2.1 | -60 | 104 |
PowerPAK_SO-8 |
| ZXM64P03X | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 100 | 75 | -3.8 | 1.8 |
MSOP-8 |
| BSP230 | P-channel enhancement mode vertical D-MOS transistor |
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NXP |
MOSFET |
P | 1 | 300 | - | - | - | - | 17000 | 0.21 | 1.5 |
SOT-223-4 |
| Si3493BDV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 34.7 | - | 28.4 | 23 | - | 8 | 2.97 |
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| IXTP36P15P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -150 | 110 | 110 | 110 | 110 | 110 | -36 | 300 |
TO-220 |
| IXTA26P10T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -100 | 90 | 90 | 90 | 90 | 90 | -26 | 150 |
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| SiA917DJ | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| FQD17P06 | 60V P-Channel QFET® MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 135 | -12 | 44 |
D-PAK |
| TSM4435BCS | P-канальный MOSFET транзистор, -30 В, -9.1 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 21 | -9.1 | 2.5 |
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