Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TK31Z60X | N-канальныq MOSFET транзистор семейства DTMOS IV-H с рабочим напряжением 600 В | Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 88 | 30.8 | 230 |
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STB8NM60D | N-CHANNEL 600V - 0.9? - 8A - D2PAK Fast Diode MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
|
FDB2614 | 200V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 22.9 | 62 | 260 |
D2-PAK |
|
IRF7451 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 90 | 3.6 | 2.5 |
SOIC-8 |
|
STP95N4F3 | N-channel 40V - 5.4m? - 80A - TO-220 STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
TO-220 |
|
IPB021N06N3G | OptiMOS™ 3 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.8 | 120 | 250 |
TO-263-3 |
|
FQP24N08 | 80V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 48 | 24 | 75 |
TO-220 |
|
STI24NM65N | N-channel 650 V - 0.16 ? - 19 A - I2PAK second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
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TSM4NB50CP | Силовой N-канальный MOSFET транзистор, 500 В, 3 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 2700 | 3 | 45 |
TO-252 |
|
IRFI9620GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3 | 30 |
TO-220F |
|
IRFR5410 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 205 | 13 | 66 |
D-PAK |
|
FDU3N40 | 400V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 2800 | 2 | 30 |
|
|
STB21NM50N | N-channel 500V - 0.15? - 18A D2/I2PAK Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 150 | 18 | 140 |
D2-PAK |
|
IRFP340PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 11 | 150 |
TO-247AC |
|
STP12NK80Z | N-channel 800V - 0.65? - 10.5A - TO-220 Zener - Protected SuperMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 650 | 10.5 | 190 |
TO-220 |
|
IRFZ46NL | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 16.5 | 53 | 120 |
TO-262 |
|
IXTD110N25T-8W | Trench Gate Power MOSFET Die | IXYS |
MOSFET |
N | 1 | 250 | - | - | - | - | 24 | 110 | - |
|
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STP80NF10FP | N-channel 100V - 0.012? - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 38 | 45 |
|
|
IRF740A | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 10 | 125 |
TO-220AB |
|
STB20NK50Z | N-CHANNEL 500V -0.23?- 17A D2PAK Zener-Protected SuperMESH™ MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 230 | 17 | 190 |
D2-PAK |