Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si6433BDQ | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | - | - | 53 | 32 | - | 4 | 1.05 |
TSSOP-8 |
| IXTA96P085T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -85 | 13 | 13 | 13 | 13 | 13 | -96 | 298 |
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| Si4948BEY | Dual P-Channel 60-V (D-S) 175C MOSFET |
|
Vishay |
MOSFET |
P | 2 | 60 | - | - | - | 126 | 100 | 2.4 | 1.4 |
SOIC-8 |
| IRF9Z34N | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 100 | 19 | 56 |
TO-220AB |
| IRF9Z14 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
| Si5485DU | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 34 | 21 | - | 12 | 31 |
PowerPAK_ChipFET |
| IRFR9210PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.9 | 25 |
D-PAK |
| Si2323DS | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 54 | - | 41 | 31 | - | 3.7 | 0.75 |
SOT-23-3 |
| IXTA15P15T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -150 | 240 | 240 | 240 | 240 | 240 | -15 | 150 |
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| IXTH24P20 | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 150 | 150 | 150 | 150 | 150 | -24 | 300 |
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| NTR1P02T1 | Power MOSFET ?20 V, ?1 A, P?Channel SOT?23 Package |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 235 | 148 | -1 | 0.4 |
SOT-23-3 |
| Si8409DB | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | 52 | 38 | - | 4.6 | 1.47 |
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| TSM2303CX | P-канальный MOSFET транзистор, -20 В, -3.2 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 130 | 80 | - | 55 | - | -3.2 | 1.25 |
SOT-23-3 |
| TJ30S06M3L | Силовой P-канальный MOSFET-транзистор |
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Toshiba |
MOSFET |
P | 1 | -60 | - | - | - | - | 21.8 | -30 | 68 |
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| ZVP4424A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
P | 1 | -240 | - | - | - | - | 7100 | -0.2 | 0.75 |
TO-92 |
| Si2327DS | P-Channel 200-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1900 | 0.38 | 0.75 |
SOT-23-3 |
| IRF4905L | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 20 | 42 | 200 |
TO-262 |
| IRF9540N | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 117 | 23 | 140 |
TO-220AB |
| IRFI9520G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 5.2 | 37 |
TO-220F |
| NTLJS3113P | Power MOSFET -20 V, -7.7 A, Cool Single P-Channel, 2x2 mm, WDFN Package |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 67 | - | - | 32 | - | -5.8 | 1.9 |
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