Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
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| NTF6P02T3 | Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 44 | - | -10 | 8.3 |
SOT-223-4 |
| DMG3415U | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 51 | - | - | 31 | - | -4 | 0.9 |
SOT-23-3 |
| DMP2066LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 40 | - | -6.5 | 2.5 |
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| DMP2066LSN | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
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| IRLTS2242TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 20В в корпусе TSOP-6 (Micro 6) |
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International Rectifier (IRF) |
MOSFET |
P | 1 | -20 | - | 55 | - | 32 | - | -6.9 | 2 |
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| NTR4101P | Trench Power MOSFET ?20 V, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 112 | - | - | 70 | - | -2.4 | 0.73 |
SOT-23-3 |
| DMP2066LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | - | - | - | 29 | - | -5.8 | 2 |
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| TSM3443CX6 | P-канальный MOSFET транзистор, -20 В, -4.7 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 100 | - | 60 | - | -4.7 | 2 |
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| DMP2066LDM | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
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| NTHS5443 | Power MOSFET ?20 V, ?4.9 A, P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 56 | - | -4.9 | 2.5 |
ChipFET_1206-8 |
| NTR3162P | Power MOSFET ?20 V, ?3.6 A, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 72 | - | - | 48 | - | -2.2 | 0.48 |
SOT-23-3 |
| TSM3433CX6 | P-канальный MOSFET транзистор, -20 В, -5.6 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 80 | 57 | - | 42 | - | -5.6 | 2 |
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| DMP2022LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 11 | 8 | -10 | 2.5 |
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| NTHS5441 | Power MOSFET ?20 V, ?5.3 A, P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 46 | - | -5.3 | 2.5 |
ChipFET_1206-8 |
| DMP2012SN | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 230 | - | -0.7 | 0.5 |
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| NTMD2P01R2 | Power MOSFET ?2.3 Amps, ?16 Volts Dual SOIC?8 Package |
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ON Semiconductor |
MOSFET |
P | 2 | -16 | - | - | 100 | 70 | - | -2.3 | 0.71 |
SOIC-8 |
| NTLJS2103P | Power MOSFET -12 V, -7.7 A, Cool Single P-Channel, 2x2 mm, WDFN Package |
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ON Semiconductor |
MOSFET |
P | 1 | -12 | 45 | - | - | 25 | - | -5.9 | 1.9 |
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| NTLJD2104P | Power MOSFET ?12 V, ?4.3 A, COOL Dual P?Channel, 2x2 mm, WDFN package |
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ON Semiconductor |
MOSFET |
P | 2 | -12 | 110 | - | - | 60 | - | -3.5 | 1.5 |
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| CSD23201W10 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -12 | - | - | - | 66 | - | -1.1 | 1 |
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