Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTD5807N | Power MOSFET 40 V, 23 A, Single N?Channel, DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 29 | 20 | 23 | 33 |
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| FA57SA50LC | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 80 | 57 | 625 |
SOT-227 |
| STU95N2LH5 | N-channel 25 V, 0.0038 ?, 80 A - IPAK STripFET™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 4.4 | 80 | 70 |
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| STB8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET D2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
| IRF7413Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 13 | 10 | 13 | 2.5 |
SOIC-8 |
| FDMS86181 | N-канальный MOSFET транзистор на 100 В / 124 А и экранированным затвором, выполненный по технологии PowerTrench® |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 4.2 | 124 | 125 |
Power 56 |
| FQU2N90 | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 5600 | 1.7 | 50 |
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| TSM4N90CZ | Силовой N-канальный MOSFET транзистор, 900 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 123 |
TO-220 |
| STF23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-220FP FDmesh™ II Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 35 |
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| FDB3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36m? |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 32 | 32 | 95 |
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| Si3424BDV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 31.5 | 23 | 8 | 2.98 |
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| IPP023NE7N3G | OptiMOS™ 3 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.1 | 120 | 300 |
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| IRFI9610GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
| STP20NM60FP | N-channel 600V - 0.25? - 20A - TO-220FP MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 250 | 20 | 45 |
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| FDD3N40 | 400V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 2800 | 2 | 30 |
D-PAK |
| NTHS4501N | Power MOSFET 30 V, 6.7 A, Single N?Channel, ChipFET Package |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 40 | 30 | 4.9 | 1.3 |
ChipFET_1206-8 |
| IRF5210L | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 60 | 38 | 200 |
TO-262 |
| 2N4416A | N-CHANNEL J-FET |
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Microsemi |
MOSFET |
N | 1 | -35 | - | - | - | - | - | 10 | 0.3 |
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| IRFP32N50KPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 135 | 32 | 460 |
TO-247AC |
| STB80NF10 | N-channel 100V - 0.012? - 80A - D2PAK Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 80 | 300 |
D2-PAK |
