Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| MGSF1N02LT1 | Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 115 | 75 | 0.75 | 0.4 |
SOT-23-3 |
| STP19NF20 | N-channel 200V - 0.15? - 15A - TO-220 MESH OVERLAY™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 150 | 15 | 90 |
TO-220 |
| FDP3205 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.1 | 100 | 150 |
TO-220 |
| STW7N95K3 | N-channel 950 V, 1.1 ?, 7.2 A, TO-247 Zener-protected SuperMESH3™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 950 | - | - | - | - | 1100 | 7.2 | 150 |
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| IRL7833S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 4.5 | 3.8 | 150 | 140 |
D2-PAK |
| IRFBC40LCPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.2 | 125 |
TO-220AB |
| STP9NK70Z | N-CHANNEL 700V - 1W - 7.5A TO-220 Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1000 | 7.5 | 115 |
TO-220 |
| STB45NF3LL | N-channel 30V - 0.014? - 45A D2PAK STripFET II™ power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | 16 | 14 | 45 | 70 |
D2-PAK |
| FDD8770 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 4 | 3.3 | 35 | 115 |
D-PAK |
| IRFR3412 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 25 | 48 | 140 |
D-PAK |
| Si3437DV | P-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 61 | 1.4 | 3.2 |
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| STI30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET I2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 190 |
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| FDMS86202ET120 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 120 В, 102 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 120 | - | - | - | - | 7.2 | 102 | 187 |
Power 56 |
| STB200N4F3 | N-channel 40V - 0.0035? - 120A - D2PAK planar STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.5 | 120 | 300 |
D2-PAK |
| FDH50N50_F133 | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 89 | 48 | 625 |
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| IRF530N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 90 | 17 | 79 |
TO-220AB |
| SUP85N15-21 | N-Channel 150-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 17.5 | 85 | 300 |
TO-220 |
| Si5908DC | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
| TSM1N80CW | Силовой N-канальный MOSFET транзистор, 800 В, 0.15 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 21600 | 0.15 | 2.1 |
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| STF10NM65N | N-channel 650 V, 0.43 ?, 9 A MDmesh™ II Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 430 | 9 | 25 |
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