Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FQD18N20V2 | 200V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 15 | 2.5 |
D-PAK |
| Si5908DC | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
| IRLZ44PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
TO-220AB |
| STD12NM50ND | N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode), DPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D-PAK |
| NTD4302 | Power MOSFET 68 Amps, 30 Volts N?Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 10 | 7.8 | 68 | 75 |
D-PAK |
| IRLSL3036PbF | 60V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | 2.2 | 1.9 | 270 | 380 |
TO-262 |
| FCPF11N60 | SuperFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 320 | 11 | 125 |
TO-220F |
| IRLU3915 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 17 | 14 | 30 | 120 |
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| IRFIBE30G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 2.1 | 35 |
TO-220F |
| STF3HNK90Z | N-channel 900V - 0.35? - 3A - TO-220FP Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 3500 | 3 | 25 |
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| DMN66D0LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3000 | 0.8 | 0.25 |
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| IRFU2307Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 16 | 42 | 110 |
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| STP14NF12FP | N-channel 120V - 0.16? - 14A - TO-220FP low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 120 | - | - | - | - | 160 | 8.5 | 25 |
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| IRF520S | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 270 | 9.2 | 60 |
D2-PAK |
| STQ2HNK60ZR-AP | N-channel 600V - 4.4? - 2A - TO-92 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 0.5 | 3 |
TO-92 |
| FQI5N90 | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1800 | 5.4 | 158 |
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| IRF7492 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 79 | 3.7 | 2.5 |
SOIC-8 |
| IXFH110N10P | PolarHT HiPerFET Power MOSFET |
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ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 110 | 480 |
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| Si4963BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 40 | 25 | - | 4.9 | 1.1 |
SOIC-8 |
| STB30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) D2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
D2-PAK |
