Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STW10NK60Z | N-channel 650 V, 0.65 ?, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 650 | 10 | 156 |
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| IRF8010L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 80 | 260 |
TO-262 |
| FQPF6N60 | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 3.6 | 44 |
TO-220F |
| Si3493BDV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 34.7 | - | 28.4 | 23 | - | 8 | 2.97 |
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| SQJ840EP | Automotive N-Channel 30 V (D-S) 175 °C MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 13.8 | 9.3 | 30 | 46 |
PowerPAK_SO-8 |
| STP7NM50N | N-channel 500V - 0.70? - 5A - TO-220 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 700 | 5 | 45 |
TO-220 |
| Si7160DP | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 8.3 | 7.2 | 20 | 27.7 |
PowerPAK_SO-8 |
| FQD13N06L | 60V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 92 | 11 | 28 |
D-PAK |
| IPT059N15N3 | NOSFET-транзистор семейства OptiMOS™ в безвыводном корпусе TO, 150В, 155А |
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Infineon Technologies |
MOSFET |
N | 1 | 150 | - | - | - | - | 5.9 | 155 | 375 |
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| PH3855L | N-channel TrenchMOS(tm) logic level FET |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | 34 | 32 | 24 | 50 |
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| STN1HNK60 | N-CHANNEL 600V - 8? - 1A SOT-223 SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3.3 |
SOT-223-4 |
| BSC031N06NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 60 В, 100 А, 3.1 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 3.1 | 100 | 139 |
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| IRF1310N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 36 | 42 | 160 |
TO-220AB |
| FQA70N15 | N-Channel Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 23 | 70 | 330 |
TO-3PN |
| PH2520U | N-channel TrenchMOS ultra low level FET |
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NXP |
MOSFET |
N | 1 | 20 | - | - | 2.8 | 2.1 | - | 100 | 62.5 |
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| SiE726DF | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 2.6 | 2 | 60 | 125 |
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| TN2640LG-G | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 400 | - | - | - | 3200 | 3000 | 4 | 1.3 |
SOIC-8 |
| STB4NK60Z | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET D2PAK - I2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 70 |
D2-PAK |
| NTMFS4707N | Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 10 | 13.5 | 10.2 | 2.3 |
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| IRF6217 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 24000 | 0.7 | 2.5 |
SOIC-8 |
