Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
ZXMP3A16DN8 | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 70 | 45 | -5.5 | 1.25 |
SOIC-8 |
|
TSM6968SDCA | Сдвоенный N-канальный MOSFET транзистор, 20 В, 6.5 А, ESD защита | Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | - | 29 | - | 22 | - | 6.5 | 1.04 |
TSSOP-8 |
|
Si4972DY | Dual N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 3 | 2.2 | 7.2 | 2.5 |
SOIC-8 |
|
Si4908DY | Dual N-Channel 40-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 40 | - | - | - | 56 | 48 | 5 | 2.75 |
SOIC-8 |
|
Si7946DP | Dual N-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 150 | - | - | - | - | 124 | 2.1 | 1.4 |
PowerPAK_SO-8 |
|
NTZD3152P | Small Signal MOSFET ?20 V, ?430 mA, Dual P?Channel with ESD Protection, SOT?563 | ON Semiconductor |
MOSFET |
P | 2 | -20 | 1000 | - | - | 500 | - | -0.43 | 0.25 |
|
|
Si1016X | Complementary N- and P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET N+P |
N+P | 2 | 20 | - | - | - | - | - | - | 0.25 |
SC89-6 |
|
FDC6301N | Dual N-Channel , Digital FET | Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 3800 | 3100 | - | 0.22 | 0.9 |
SSOT-6 |
|
Si6963BDQ | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 65 | 36 | - | 3.4 | 0.83 |
TSSOP-8 |
|
TSM4433DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -3.9 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 150 | 110 | - | 90 | - | -3.9 | 2.5 |
|
|
IRF7905PBF | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 29.3 | 21.8 | 8.9 | 2 |
SOIC-8 |
|
NTUD3171PZ | Small Signal MOSFET ?20 V, ?200 mA, Dual P?Channel, 1.0 x 1.0 mm SOT?963 Package | ON Semiconductor |
MOSFET |
P | 2 | -20 | 3400 | - | 2000 | - | - | -200 | -125 |
|
|
DMP2240UDM | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 180 | - | - | 92 | - | -2 | 0.6 |
|
|
DMN5L06VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
|
|
FQS4901 | 400V Dual N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 400 | - | - | - | - | 3200 | 0.45 | 2 |
SOIC-8 |
|
Si4618DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 9.5 | 8.3 | 15.2 | 4.16 |
SOIC-8 |
|
FDMC8200 | Dual N-Channel PowerTrench® MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 16 | 18 | 1.9 |
Power 33 |
|
FDS6990AS | Dual 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 21 | 17 | 7.5 | 2 |
SOIC-8 |
|
Si7905DN | Dual P-Channel 40-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 40 | - | - | - | 65 | 48 | 6 | 20.8 |
PowerPAK_1212-8 |
|
IRF7751GPBF | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 55 | 35 | 4.5 | 1 |
TSSOP-8 |