Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
RFD14N05 | N-Channel Power MOSFETs | Fairchild Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | - | 100 | 14 | 48 |
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IPD90N06S4-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 4.2 | 90 | 107 |
TO-252 |
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STB8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET D2PAK | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
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IRLI530GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 160 | 9.7 | 42 |
TO-220F |
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STW54NK30Z | N-CHANNEL 300V - 0.052? - 54A TO-247 Zener-Protected SuperMESH™ MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 300 | - | - | - | - | 52 | 54 | 300 |
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IRFI720G | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 2.6 | 30 |
TO-220F |
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STFV3N150 | N-channel 1500 V - 6 ? - 2.5 A - PowerMESH™ Power MOSFET TO-220FH | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 1100 | 2.5 | 30 |
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IRFSL3207ZPBF | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 4.1 | 75 | 300 |
TO-262 |
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NTD5803N | Power MOSFET 40 V, 76 A, Single N?Channel, DPAK | ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | - | 4.9 | 76 | 83 |
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STD65N55F3 | N-channel 55V - 6.5m? - 80A - DPAK STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.5 | 80 | 110 |
D-PAK |
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FA38SA50LC | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 130 | 38 | 500 |
SOT-227 |
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STD5NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET DPAK, IPAK | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 900 | 5 | 96 |
D-PAK |
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FDMT800152DC | N-канальный MOSFET-транзистор с технологией Dual Cool 88, выполненный на основе техпроцесса PowerTrench®, 150 В, 99 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 6.5 | 99 | 156 |
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FQD2N90 | 900V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 5600 | 1.7 | 50 |
D-PAK |
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STD95N2LH5 | N-channel 25 V, 0.0038 ?, 80 A - DPAK STripFET™ V Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 4.4 | 80 | 70 |
D-PAK |
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TSM4N90CI | Силовой N-канальный MOSFET транзистор, 900 В, 4 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 38.7 |
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PSMN5R0-30YL | N-channel TrenchMOS logic level FET | NXP |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.63 | 84 | 61 |
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STW23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-247 FDmesh™ II Power MOSFET (with fast diode) | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 150 |
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IRFI9610G | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
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RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 22 | 51 | 131 |
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