Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IPP020N06N | Транзистор серии OptiMOS™ на 60 В, 120 А |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 2 | 120 | 214 |
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| IPP120N06S4-H1 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.1 | 120 | 250 |
TO-220 |
| IPI120N06S4-H1 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.1 | 120 | 250 |
TO-262 |
| IPB120N06S4-H1 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.8 | 120 | 250 |
TO-263-3 |
| IPP45N06S4L-08 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 9.7 | 7 | 45 | 71 |
TO-220 |
| IPB180N06S4-H1 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.3 | 180 | 250 |
TO-263-7 |
| IPI45N06S4L-08 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 9.7 | 7 | 45 | 71 |
TO-262 |
| IPD25N06S4L-30 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 36 | 23 | 25 | 29 |
TO-252 |
| IPB45N06S4L-08 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 9.4 | 6.7 | 45 | 71 |
TO-263-3 |
| IPD30N06S4L-23 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 27 | 18 | 30 | 36 |
TO-252 |
| IPP80N06S4L-07 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 7.9 | 5.5 | 80 | 79 |
TO-220 |
| BSC016N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.6 | 100 | 139 |
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| IPD50N06S4L-12 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 14.6 | 9.6 | 50 | 50 |
TO-252 |
| IPI80N06S4L-07 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 7.9 | 5.5 | 80 | 79 |
TO-262 |
| BSC014N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.45 | 100 | 156 |
|
| IPD50N06S4L-08 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 9 | 6.3 | 50 | 71 |
TO-252 |
| IPB80N06S4L-07 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 7.6 | 5.2 | 80 | 79 |
TO-263-3 |
| BSC039N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 3.9 | 100 | 69 |
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| IPD90N06S4L-06 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 7.4 | 5 | 90 | 79 |
TO-252 |
| IPP80N06S4L-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 5.7 | 4.2 | 80 | 107 |
TO-220 |
