Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STB80PF55 | P-channel 55V - 0.016? - 80A - D2PAK STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
P | 1 | 55 | - | - | - | - | 16 | 80 | 300 |
D2-PAK |
| IRF7306Q | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 160 | 100 | 3.6 | 2 |
SOIC-8 |
| ZXMP6A18DN8 | DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 2 | -60 | - | - | - | 80 | 55 | -4.8 | 1.25 |
SOIC-8 |
| SUM110P06-07L | P-Channel 60-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 7 | 5.5 | 110 | 375 |
D2-PAK |
| IXTP140P05T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -50 | 9 | 9 | 9 | 9 | 9 | -140 | 83 |
TO-220 |
| Si9407BDY | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 126 | 100 | 4.7 | 5 |
SOIC-8 |
| DMG3415U | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 51 | - | - | 31 | - | -4 | 0.9 |
SOT-23-3 |
| IRLMS5703 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 400 | 180 | 2.4 | 1.7 |
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| IRF9Z34L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 140 | 18 | 88 |
TO-262 |
| SiA413DJ | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 36 | - | 28 | 24 | - | 12 | 19 |
PowerPAK SC70-6 |
| BSH203 | P-channel enhancement mode MOS transistor |
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NXP |
MOSFET |
P | 1 | 30 | 1100 | - | 920 | 660 | - | 0.47 | 0.417 |
SOT-23-3 |
| DMP3160L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 165 | 97 | -2.7 | 1.08 |
SOT-23-3 |
| Si3951DV | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 164 | 92 | - | 2.7 | 2 |
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| IXTR90P20P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -200 | 48 | 48 | 48 | 48 | 48 | -53 | 312 |
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| IXTR210P10T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -100 | 8 | 8 | 8 | 8 | 8 | -158 | 390 |
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| NTR4502P | Power MOSFET ?30 V, ?1.95 A, Single, P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 240 | 155 | -1.95 | 1.25 |
SOT-23-3 |
| Si7611DN | P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 27 | 21 | 9.3 | 2.7 |
PowerPAK_1212-8 |
| TSM3457CX6 | P-канальный MOSFET транзистор, -30 В, -5 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 100 | 60 | -5 | 2 |
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| IPB80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.8 | -80 | 137 |
TO-263-3 |
| ZVP3310F | SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 20000 | 0.075 | 0.33 |
SOT-23-3 |
