Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMN3051LDM | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 50 | 28 | 4 | 0.9 |
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DMN3052L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 33 | 26 | 5.4 | 1.4 |
SOT-23-3 |
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DMN3052LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 30 | 24 | 7.1 | 2.5 |
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DMN3112S | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 92 | 47 | 5.8 | 1.4 |
SOT-23-3 |
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DMN3115UDM | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 40 | - | 3.2 | 0.9 |
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DMN3150L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 28 | - | - | - | 60 | - | 3.2 | 1.25 |
SOT-23-3 |
|
DMN3150LW | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 28 | - | - | - | 73 | - | 1.6 | 0.35 |
SOT-323 |
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DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 62 | - | 2.2 | 0.65 |
SOT-23-3 |
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DMN32D2LDF | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 30 | 2200 | - | - | - | - | 0.4 | 0.28 |
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DMN32D2LV | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | 2200 | - | - | - | - | 0.4 | 0.4 |
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DMN3300U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | 185 | - | - | 100 | - | 2 | 0.6 |
SOT-23-3 |
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DMN4468LSS | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 15 | 11 | 8.7 | 1.52 |
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DMN4800LSS | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 14 | 11 | 10 | 2.5 |
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DMN5010VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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DMN55D0UT | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 50 | - | - | - | - | - | 0.16 | 0.2 |
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DMN5L06DMK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | - | - | - | - | 3500 | 0.308 | 0.4 |
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DMN5L06DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.305 | 0.25 |
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DMN5L06K | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 50 | 3000 | - | - | - | - | 0.3 | 0.35 |
SOT-23-3 |
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DMN5L06TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 50 | 1800 | - | - | - | - | 0.28 | 0.15 |
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DMN5L06VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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