Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTB5605 | Power MOSFET -60 Volt, -18.5 Amp P-Channel, D2PAK |
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ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | - | -18.5 | 88 |
D2-PAK |
| DMP57D5UFB | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | - | -0.2 | 0.425 |
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| SiA419DJ | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 42 | - | 32 | 25 | - | 12 | 19 |
PowerPAK SC70-6 |
| NTHD2102P | Power MOSFET ?8.0 V, ?4.6 A Dual P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -8 | 100 | - | - | 50 | - | -3.4 | 1.1 |
ChipFET_1206-8 |
| Si6423DQ | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 11.2 | - | 8.5 | 6.8 | - | 8.2 | 1.05 |
TSSOP-8 |
| TSM9933DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -4.7 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | - | 85 | - | 60 | - | -4.7 | 2 |
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| Si4866BDY | N-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 12 | 6 | - | 4.8 | 4.2 | - | 21.5 | 4.45 |
SOIC-8 |
| DMN5L06K | N-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
N | 1 | 50 | 3000 | - | - | - | - | 0.3 | 0.35 |
SOT-23-3 |
| IRF7475 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 12 | - | - | 50 | 15 | - | 11 | 2.5 |
SOIC-8 |
| Si1013X | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 1800 | - | 1200 | 800 | - | 0.35 | 0.25 |
SC89-3 |
| NTLJS2103P | Power MOSFET -12 V, -7.7 A, Cool Single P-Channel, 2x2 mm, WDFN Package |
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ON Semiconductor |
MOSFET |
P | 1 | -12 | 45 | - | - | 25 | - | -5.9 | 1.9 |
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| NTP75N03L09 | Power MOSFET 75 Amps, 30 Volts N?Channel TO?220 |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | - | 75 | 125 |
TO-220 |
| FDMC6890NZ | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 58 | - | 4 | 1.92 |
Power 33 |
| DMN2170U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 50 | - | 2.3 | 0.6 |
SOT-23-3 |
| Si5853CDC | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | 170 | - | 120 | 86 | - | 4 | 3.1 |
ChipFET_1206-8 |
| Si9926CDY | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 17 | 15 | - | 8 | 3.1 |
SOIC-8 |
| Si2305ADS | P-Channel 8-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 70 | - | 48 | 32 | - | 5.4 | 1.7 |
SOT-23-3 |
| PMV65XP | P-channel TrenchMOS™ extremely low level FET |
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NXP |
MOSFET |
P | 1 | 20 | - | - | 90 | 65 | - | 3.9 | 1.92 |
SOT-23-3 |
| IRF7604 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 130 | 90 | - | 3.6 | 1.8 |
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| IRL3502S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 8 | - | 110 | 140 |
D2-PAK |
