Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| SiA421DJ | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 46 | 29 | 12 | 19 |
PowerPAK SC70-6 |
| FCU2250N80Z | N-канальный MOSFET-транзистор семейства SuperFET® II, 800 В, 2.6 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 0.00225 | 2.6 | 39 |
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| FQT4N25 | 250V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 1380 | 0.83 | 2.5 |
SOT-223-4 |
| IRF3315L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 82 | 21 | 94 |
TO-262 |
| STW16NM50N | N-channel 500 V - 0.21 ? - 15 A MDmesh™ II Power MOSFET TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 210 | 15 | 125 |
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| PHB9NQ20T | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 8.7 | 88 |
D2-PAK |
| SUD40N08-16 | N-Channel 80-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
N | 1 | 80 | - | - | - | - | 13 | 40 | 136 |
D-PAK |
| IPD50R950CE | 500В силовой транзистор серии CoolMOS™ CE |
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Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 950 | 12.8 | 34 |
TO-252 |
| FQP10N60C | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 600 | 9.5 | 156 |
TO-220 |
| IPA60R600C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 540 | 7.3 | 28 |
TO-220F |
| IRF7316 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 98 | 58 | 4.9 | 2 |
SOIC-8 |
| NTR1P02T1 | Power MOSFET ?20 V, ?1 A, P?Channel SOT?23 Package |
|
ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 235 | 148 | -1 | 0.4 |
SOT-23-3 |
| STD3NK50Z | N-CHANNEL 500V - 2.8? - 2.3A DPAK/IPAK Zener-Protected SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 2800 | 2.3 | 45 |
D-PAK |
| IRFZ48RS | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 50 | 190 |
D2-PAK |
| FDD8782 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 11 | 8.5 | 35 | 50 |
D-PAK |
| ZVP2106G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -60 | - | - | - | - | 5000 | -0.45 | 2 |
SOT-223-4 |
| IRLR014N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 210 | 140 | 10 | 28 |
D-PAK |
| NTA4001N | Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 1500 | - | 0.238 | 0.3 |
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| STP19NF20 | N-channel 200V - 0.15? - 15A - TO-220 MESH OVERLAY™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 150 | 15 | 90 |
TO-220 |
| IRFD220 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 0.8 | 1 |
HEXDIP |
