Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| SUM110P08-11L | P-Channel 80-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 80 | - | - | - | 12 | 9.3 | 110 | 375 |
D2-PAK |
| IXTA140P05T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -50 | 9 | 9 | 9 | 9 | 9 | -140 | 83 |
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| Si4455DY | P-Channel 150-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 245 | 2.8 | 5.9 |
SOIC-8 |
| SSM6J409TU | Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) |
|
Toshiba |
MOSFET |
P | 1 | -20 | 46.5 | - | 30.2 | 22.1 | - | -9.5 | 1 |
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| IRLMS6802 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 100 | 50 | - | 5.6 | 2 |
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| NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
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| IRF9Z34 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 140 | 18 | 88 |
TO-220AB |
| SiA443DJ | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 72 | - | 52 | 37 | - | 9 | 15 |
PowerPAK SC70-6 |
| DMP3130L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 73 | 59 | -3.5 | 1.4 |
SOT-23-3 |
| BSH202 | P-channel enhancement mode MOS transistor |
|
NXP |
MOSFET |
P | 1 | 30 | - | - | - | 890 | 630 | 0.52 | 0.417 |
SOT-23-3 |
| Si3983DV | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | 170 | - | 116 | 86 | - | 2.1 | 0.83 |
|
| IXTT48P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 85 | 85 | 85 | 85 | 85 | -48 | 462 |
|
| IXTX210P10T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -100 | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 | -210 | 1040 |
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| Si7309DN | P-Channel 60-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 120 | 92 | 8 | 19.8 |
PowerPAK_1212-8 |
| TSM3455CX6 | P-канальный MOSFET транзистор, -30 В, -3.5 А |
|
Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 170 | 100 | -3.5 | 2 |
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| IPD90P03P4-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.6 | -90 | 137 |
TO-252 |
| ZVP1320F | SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 80000 | -0.035 | 0.33 |
SOT-23-3 |
| Si2303CDS | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 275 | 158 | 2.7 | 2.3 |
SOT-23-3 |
| IRLML6402 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 135 | 65 | - | 3.7 | 1.3 |
SOT-23-3 |
| IRF9510 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 4 | 43 |
TO-220AB |
