Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| TSM2NB60CI | Силовой N-канальный MOSFET транзистор, 600 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 2 | 25 |
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| STB19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
D2-PAK |
| IRF9640SPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 11 | 125 |
D2-PAK |
| IRFI840G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.6 | 40 |
TO-220F |
| STW15NM60N | N-channel 600V - 0.270? - 14A - TO-247 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 270 | 14 | 125 |
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| ZVP2110G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 8000 | -0.31 | 2 |
SOT-223-4 |
| IRFP15N60L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 385 | 15 | 280 |
TO-247AC |
| IRFU4104 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.5 | 42 | 140 |
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| STD40NF10 | N-channel 100V - 0.025? - 50A DPAK Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 25 | 50 | 125 |
D-PAK |
| STW6NK70Z | N-channel 700V - 1.5? - 5A - TO-247 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1500 | 5 | 110 |
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| IRF634NPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 435 | 8 | 88 |
TO-220AB |
| IRF8010S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 80 | 260 |
D2-PAK |
| STP22NF03L | N-channel 30 V, 0.0038 ?, 22 A, TO-220 STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 38 | 22 | 45 |
TO-220 |
| FQPF55N10 | 100V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 34.2 | 60 |
TO-220F |
| STP12NM60N | N-channel 600V - 0.35? - 10A - TO-220 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
TO-220 |
| FQU13N06L | 60V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 92 | 11 | 28 |
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| STF7NM50N | N-channel 500V - 0.70? - 5A - TO-220FP Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 700 | 5 | 20 |
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| BSC042NE7NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 75 В, 100 А, 4.2 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 4.2 | 100 | 125 |
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| IRF1310NL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 36 | 42 | 160 |
TO-262 |
| FDMC86139P | P-канальный MOSFET-транзистор с напряжением сток-исток -100 В, выполненный по технологии PowerTrench® |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -100 | - | - | - | - | 67 | -15 | 40 |
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