Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFBC40LPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.2 | 3.1 |
TO-262 |
| IRFR3504 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 9.2 | 30 | 140 |
D-PAK |
| STP45NF3LL | N-channel 30V - 0.014? - 45A TO-220 STripFET II™ power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | 16 | 14 | 45 | 70 |
TO-220 |
| FDU6676AS | N-Channel PowerTrench SyncFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 5.8 | 4.8 | 90 | 70 |
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| STP7NK80Z | N-channel 800V - 1.5? - 5.2A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 1500 | 5.2 | 125 |
TO-220 |
| Si3459BDV | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 240 | 180 | 2.9 | 3.3 |
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| FDMS86255ET150 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 150 В, 63 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 12.4 | 63 | 136 |
Power 56 |
| IRF530NL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 90 | 17 | 79 |
TO-262 |
| STP200N4F3 | N-channel 40V - 0.0035? - 120A - TO220 planar STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 4 | 120 | 300 |
TO-220 |
| FDA50N50 | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 89 | 48 | 625 |
TO-3PN |
| STP30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 190 |
TO-220 |
| SUP90N15-18P | N-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 14.5 | 90 | 375 |
TO-220 |
| FQU18N20V2 | 200V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 15 | 2.5 |
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| TSM1NB60CP | Силовой N-канальный MOSFET транзистор, 600 В, 0.5 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 10000 | 0.5 | 39 |
TO-252 |
| Si5920DC | Dual N-Channel 1.5V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 8 | 36 | - | 285 | 25 | - | 4 | 3.12 |
ChipFET_1206-8 |
| STD11NM60N | N-channel 600 V - 0.37 ? - 10 A - IPAK DPAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
D-PAK |
| IPP45N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.9 | 45 | 71 |
TO-220 |
| IRLZ44SPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
D2-PAK |
| FDMS9620S | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 23 | 18 | 16 | 2.5 |
Power 56 |
| IRLU4343 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 65 | 50 | 26 | 79 |
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