Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| 2N7002K | N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.35 |
SOT-23-3 |
| STB5NK50Z | N-CHANNEL 500V - 1.22? - 4.4A D2/I2PAK Zener-Protected SuperMESH™MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 122 | 4.4 | 70 |
D2-PAK |
| NTMFS4834N | Power MOSFET 30 V, 130 A, Single N-Channel, SO-8 FL |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 3.5 | 2.6 | 21 | 2.31 |
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| IRF5805 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 165 | 98 | 3.8 | 2 |
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| FDM3622 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 44 | 4.4 | 2.1 |
Power 33 |
| IRF6713 | Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 3.5 | 2.2 | 22 | 2.2 |
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| IRFPS35N50L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 125 | 34 | 450 |
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| STF16NF25 | N-channel 250V - 0.195? - 13A - TO-220FP low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 25 |
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| NTP5412N | Power MOSFET 60 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.1 | 60 | 125 |
TO-220AB |
| IRL3714S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 28 | 20 | 36 | 43 |
D2-PAK |
| FDA28N50F | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 140 | 28 | 310 |
TO-3PN |
| DMP2022LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 11 | 8 | -10 | 2.5 |
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| IRFBC30AL | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-262 |
| STB140NF55-1 | N-channel 55V - 0.0065Ом - 80A - D2PAK - STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.5 | 80 | 300 |
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| STW43NM50N | N-channel 500 V, 0.070 ?, 37 A MDmesh™ II Power MOSFET TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 70 | 37 | 255 |
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| IRFP4321PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 15.5 | 78 | 310 |
TO-247AC |
| FDPF5N50 | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1150 | 5 | 28 |
TO-220F |
| Si4401BDY | P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 16.5 | 11 | 8.7 | 1.5 |
SOIC-8 |
| FCMT199N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 20.2 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 199 | 20.2 | 208 |
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| PSMN025-100D | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 22 | 47 | 150 |
D-PAK |
