Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF7416 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 35 | 20 | 10 | 2.5 |
SOIC-8 |
| IRF9620 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3.5 | 40 |
TO-220AB |
| Si7913DN | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 51 | - | 38 | 29 | - | 5 | 1.3 |
PowerPAK_1212-8 |
| IRF6100 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 95 | 65 | - | 5.1 | 1.5 |
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| IRFP9140PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 21 | 180 |
TO-247AC |
| DMP2225L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 80 | - | -2.6 | 1.08 |
SOT-23-3 |
| Si4931DY | Dual P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | 23 | - | 18 | 14.5 | - | 6.7 | 1.1 |
SOIC-8 |
| IXTK120P20T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -200 | 30 | 30 | 30 | 30 | 30 | -120 | 1040 |
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| IXTQ10P50P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -500 | 1000 | 1000 | 1000 | 1000 | 1000 | -10 | 300 |
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| STS10PF30L | P-CHANNEL 30V - 0.012 ? - 10A SO-8 STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
P | 1 | 30 | - | - | - | - | 12 | 10 | 2.5 |
SOIC-8 |
| IRF7304Q | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 140 | 90 | - | 4.3 | 2 |
SOIC-8 |
| BS250F | SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
P | 1 | -45 | - | - | - | - | 9000 | -0.09 | 0.33 |
SOT-23-3 |
| SUB65P04-15 | P-Channel 60-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 18 | 12 | 65 | 120 |
D2-PAK |
| IXTA32P05T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -50 | 39 | 39 | 39 | 39 | 39 | -32 | 83 |
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| MMSF7P03HD | Power MOSFET 7 A, 30 V, P?Channel SO?8 |
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ON Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | 42 | 26 | 7 | 2.5 |
SOIC-8 |
| Si4447DY | P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 59 | 45 | 3.3 | 1.1 |
SOIC-8 |
| CSD23201W10 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -12 | - | - | - | 66 | - | -1.1 | 1 |
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| FDG332PZ | -20V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 20 | 117 | - | 90 | 73 | - | 2.6 | 48 |
SC70-6 |
| IRLML6302 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 900 | 600 | - | 0.78 | 0.54 |
SOT-23-3 |
| IRFD9014 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 1.1 | 1.3 |
HEXDIP |
