Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si5435BDC | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 65 | 35 | 4.3 | 1.3 |
ChipFET_1206-8 |
| IXTA28P065T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -65 | 45 | 45 | 45 | 45 | 45 | -28 | 83 |
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| MMDF2P02HD | Power MOSFET 2 Amps, 20 Volts P?Channel SO?8, Dual |
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ON Semiconductor |
MOSFET |
P | 2 | 20 | - | - | - | 152 | 118 | 3.3 | 2 |
SOIC-8 |
| Si4973DY | Dual P-Channel 25-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | - | 18 | 5.8 | 1.1 |
SOIC-8 |
| SI4435DY | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 35 | 20 | 8 | 2.5 |
SOIC-8 |
| NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P?Channel, SC?88 ESD Protection |
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ON Semiconductor |
MOSFET |
P | 2 | -8 | 510 | - | - | 220 | - | -0.775 | 0.27 |
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| IRF9Z24L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 280 | 11 | 60 |
TO-262 |
| SiA419DJ | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 42 | - | 32 | 25 | - | 12 | 19 |
PowerPAK SC70-6 |
| IRFR9310PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 400 | - | - | - | - | 7000 | 1.8 | 50 |
D-PAK |
| DMP3100L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 147 | 86 | -2.7 | 1.08 |
SOT-23-3 |
| Si2305ADS | P-Channel 8-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 70 | - | 48 | 32 | - | 5.4 | 1.7 |
SOT-23-3 |
| IXTR48P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 93 | 93 | 93 | 93 | 93 | -30 | 190 |
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| IXTY10P15T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -150 | 350 | 350 | 350 | 350 | 350 | -10 | 83 |
TO-252 |
| Si7113DN | P-Channel 100-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | 119 | 108 | 13.2 | 52 |
PowerPAK_1212-8 |
| TSM3433CX6 | P-канальный MOSFET транзистор, -20 В, -5.6 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 80 | 57 | - | 42 | - | -5.6 | 2 |
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| IPD80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.7 | 5.6 | -80 | 88 |
TO-252 |
| ZXMP10A18G | 100V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 150 | -3.7 | 2 |
SOT-223-4 |
| Si2343DS | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 68 | 43 | 3.1 | 0.75 |
SOT-23-3 |
| IRF9Z24NL | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 12 | 60 |
TO-262 |
| NTA4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?75 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 490 | - | - | 260 | - | -760 | 301 |
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