Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTP75N03R | Power MOSFET 75 Amps, 25 Volts N?Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 8.1 | 5.6 | 75 | 2.08 |
TO-220 |
| IRFI720GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 2.6 | 30 |
TO-220F |
| STD6NF10 | N-channel 100 V, 0.22 ?, 6 A, DPAK low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 220 | 6 | 30 |
D-PAK |
| IRFSL3306PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 4.2 | 75 | 230 |
TO-262 |
| NTD5807N | Power MOSFET 40 V, 23 A, Single N?Channel, DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 29 | 20 | 23 | 33 |
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| STFW3N150 | N-channel 1500 V - 6 ? - 2.5 A - PowerMESH™ Power MOSFET TO-3PF |
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STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 1100 | 2.5 | 0 |
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| FA57SA50LC | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 80 | 57 | 625 |
SOT-227 |
| STU95N2LH5 | N-channel 25 V, 0.0038 ?, 80 A - IPAK STripFET™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 4.4 | 80 | 70 |
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| IRF7413Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 13 | 10 | 13 | 2.5 |
SOIC-8 |
| FQU2N90 | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 5600 | 1.7 | 50 |
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| STB8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET D2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
| FDMS86181 | N-канальный MOSFET транзистор на 100 В / 124 А и экранированным затвором, выполненный по технологии PowerTrench® |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 4.2 | 124 | 125 |
Power 56 |
| SiB417DK | P-Channel 1.2-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 76 | - | 58 | 42 | - | 9 | 13 |
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| STF23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-220FP FDmesh™ II Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 35 |
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| FDB3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36m? |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 32 | 32 | 95 |
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| TSM4N90CZ | Силовой N-канальный MOSFET транзистор, 900 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 123 |
TO-220 |
| Si3424BDV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 31.5 | 23 | 8 | 2.98 |
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| IPP023NE7N3G | OptiMOS™ 3 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.1 | 120 | 300 |
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| IRFI9610GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
| STP20NM60FP | N-channel 600V - 0.25? - 20A - TO-220FP MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 250 | 20 | 45 |
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