Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| PMZ390UN | N-channel TrenchMOS standard level FET |
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NXP |
MOSFET Транзисторы |
N | 1 | 30 | - | - | 460 | 390 | - | 1.78 | 2.5 |
SOT-883 |
| Si5447DC | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 130 | - | 91 | 64 | - | 3.5 | 1.3 |
ChipFET_1206-8 |
| Si8424DB | N-Channel 1.2-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 8 | 29 | - | 27 | 25 | - | 12.2 | 6.25 |
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| Si2351DS | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 164 | 92 | - | 2.8 | 2.1 |
SOT-23-3 |
| TSM6968SDCA | Сдвоенный N-канальный MOSFET транзистор, 20 В, 6.5 А, ESD защита |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | - | 29 | - | 22 | - | 6.5 | 1.04 |
TSSOP-8 |
| STS2DPFS20V | P-CHANNEL 20V - 0.14 W - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE |
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STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | 250 | 200 | - | 2.5 | 2 |
SOIC-8 |
| NTZD3152P | Small Signal MOSFET ?20 V, ?430 mA, Dual P?Channel with ESD Protection, SOT?563 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 1000 | - | - | 500 | - | -0.43 | 0.25 |
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| Si1016X | Complementary N- and P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET N+P |
N+P | 2 | 20 | - | - | - | - | - | - | 0.25 |
SC89-6 |
| FDC6301N | Dual N-Channel , Digital FET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 3800 | 3100 | - | 0.22 | 0.9 |
SSOT-6 |
| NTGS3443T1 | Power MOSFET 2 Amps, 20 Volts P?Channel TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 82 | 58 | - | -2.2 | 0.5 |
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| IRLML6402 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 135 | 65 | - | 3.7 | 1.3 |
SOT-23-3 |
| Si6963BDQ | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 65 | 36 | - | 3.4 | 0.83 |
TSSOP-8 |
| TSM4433DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -3.9 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 150 | 110 | - | 90 | - | -3.9 | 2.5 |
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| NTUD3171PZ | Small Signal MOSFET ?20 V, ?200 mA, Dual P?Channel, 1.0 x 1.0 mm SOT?963 Package |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 3400 | - | 2000 | - | - | -200 | -125 |
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| DMP2240UDM | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | 180 | - | - | 92 | - | -2 | 0.6 |
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| NTD24N06L | Power MOSFET 24 Amps, 60 Volts Logic Level, N?Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 24 | 62.5 |
D-PAK |
| DMN5L06VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.28 | 0.25 |
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| Si1499DH | P-Channel 1.2-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 94 | - | 78 | 62.2 | - | 1.6 | 2.78 |
SC70-6 |
| NTK3139P | Power MOSFET ?20 V, ?780 mA, Single P?Channel with ESD Protection, SOT?723 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 700 | - | - | 380 | - | -0.78 | -0.45 |
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| CSD25301W1015 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -20 | - | - | - | 62 | - | -2.2 | 1.5 |
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