Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFD9120PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 1 | 1.3 |
HEXDIP |
| NTK3142P | Small Signal MOSFET ?20 V, ?280 mA, P?Channel with ESD Protection, SOT?723 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 6100 | - | - | 2900 | - | -0.26 | -0.4 |
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| Si7485DP | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 10.6 | - | 7.4 | 6 | - | 12.5 | 1.8 |
PowerPAK_SO-8 |
| PMK50XP | P-channel TrenchMOS extremely low level FET |
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NXP |
MOSFET |
P | 1 | 20 | - | - | - | - | 50 | 7.9 | 5 |
SOIC-8 |
| ZXMD63P03X | DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 270 | 185 | -2 | 0.87 |
MSOP-8 |
| Si3441BDV | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 98 | 70 | - | 2.45 | 0.86 |
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| IXTH44P15T | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -150 | 65 | 65 | 65 | 65 | 65 | -44 | 298 |
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| IXTT50P085 | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -185 | 55 | 55 | 55 | 55 | 55 | -50 | 300 |
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| NTUD3171PZ | Small Signal MOSFET ?20 V, ?200 mA, Dual P?Channel, 1.0 x 1.0 mm SOT?963 Package |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 3400 | - | 2000 | - | - | -200 | -125 |
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| NTZD3152P | Small Signal MOSFET ?20 V, ?430 mA, Dual P?Channel with ESD Protection, SOT?563 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 1000 | - | - | 500 | - | -0.43 | 0.25 |
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| Si7945DP | Dual P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 25 | 16 | 7 | 1.4 |
PowerPAK_SO-8 |
| TSM9435CS | P-канальный MOSFET транзистор, -30 В, -5.3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -5.3 | 2.5 |
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| IPI80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-262 |
| Si3851DV | P-Channel 30-V (D-S) Rated MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 298 | 165 | 1.6 | 0.83 |
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| IRF7703 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 40 | - | - | - | 45 | 28 | 6 | 1.5 |
TSSOP-8 |
| IRF9540 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 19 | 150 |
TO-220AB |
| NTGD4161P | Power MOSFET ?30 V, ?2.3 A, Dual P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 190 | 105 | -2.1 | 1.1 |
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| Si8435DB | P-Channel 1.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 48 | - | 40 | 34 | - | 10 | 6.25 |
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| IRF7204 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | - | 100 | 60 | 5.3 | 2.5 |
SOIC-8 |
| IRFI9Z24GPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 280 | 8.5 | 37 |
TO-220F |
