Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
NTR4171P | Power MOSFET ?30 V, ?3.5 A, Single P?Channel, SOT?23 | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 60 | 50 | -2.2 | 0.48 |
SOT-23-3 |
|
NTTS2P02R2 | Power MOSFET ?2.4 Amps, ?20 Volts Single P?Channel Micro8 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 100 | 70 | - | -2.4 | 0.78 |
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SiA811DJ | P-Channel 20-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
P | 1 | 20 | 153 | - | 109 | 78 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
|
FQPF15P12 | 120V P-Channel QFET® | Fairchild Semiconductor |
MOSFET |
P | 1 | -120 | - | - | - | - | 200 | -15 | 41 |
TO-220F |
|
TSM4459CS | P-канальный MOSFET транзистор, -30 В, -17 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 9.5 | 5.2 | -17 | 2.5 |
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IRFTS9342TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) | International Rectifier (IRF) |
MOSFET |
P | 1 | -30 | - | - | - | 66 | 40 | -5.8 | 2 |
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IPI80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor | Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-262 |
|
ZXMP2120E5 | 200V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 28000 | -0.122 | 0.75 |
SOT-23-5 |
|
Si3459BDV | P-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 240 | 180 | 2.9 | 3.3 |
|
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IRF7404 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 60 | 40 | - | 6.7 | 2.5 |
SOIC-8 |
|
NTGD1100L | Power MOSFET 8 V, ±3.3 A, Load Switch with Level?Shift, P?Channel, TSOP?6 | ON Semiconductor |
MOSFET |
P | 2 | 8 | 80 | - | - | 40 | - | 3.3 | 0.83 |
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IRF9530 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 300 | 12 | 88 |
TO-220AB |
|
Si8445DB | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 97 | - | 82 | 70 | - | 9.8 | 11.4 |
|
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IRF7233 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 20 | - | 9.5 | 2.5 |
SOIC-8 |
|
IRFI9Z14G | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 5.3 | 27 |
TO-220F |
|
DMP2066LSN | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
|
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Si1033X | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 15000 | - | 12000 | 8000 | - | 0.15 | 0.25 |
SC89-6 |
|
IXTH10P60 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -600 | 1000 | 1000 | 1000 | 1000 | 1000 | -10 | 300 |
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IRF7342 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 55 | - | - | - | 170 | 105 | 3.4 | 2 |
SOIC-8 |
|
ZXM64P035L3 | 35V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -35 | - | - | - | 105 | 75 | -12 | 20 |
TO-220 |