Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM2303CX | P-канальный MOSFET транзистор, -20 В, -3.2 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 130 | 80 | - | 55 | - | -3.2 | 1.25 |
SOT-23-3 |
|
BSH121 | N-channel enhancement mode field-effect transistor | NXP |
MOSFET |
N | 1 | 55 | 3100 | - | 2400 | 2300 | - | 300 | 0.7 |
SOT-323 |
|
BSC019N02KS | Силовой MOSFET-транзистор серии OptiMOS™3, 20 В, 100 А, 1.95 мОм | Infineon Technologies |
MOSFET |
N | 1 | 20 | - | 3 | - | 1.95 | - | 100 | 104 |
|
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DMP2004DWK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.25 |
|
|
STAC4932B | N-канальный радиочастотный силовой MOSFET-транзистор | STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | - | 0.001 | 1200 |
|
|
IRF7402 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 50 | 35 | - | 6.8 | 2.5 |
SOIC-8 |
|
SiB911DK | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 455 | - | 345 | 242 | - | 2.6 | 3.1 |
|
|
NTHD5904N | Power MOSFET 20 V, 4.5 A, Dual N?Channel, ChipFET | ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 40 | - | 3.3 | 1.13 |
ChipFET_1206-8 |
|
ZXMN2A02N8 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 20 | - | 10.2 | 2.5 |
SOIC-8 |
|
NTMS4N01R2 | Power MOSFET 4.2 Amps, 20 Volts N?Channel Enhancement?Mode Single SO?8 Package | ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | 35 | 30 | - | 5.9 | 2.5 |
SOIC-8 |
|
Si5856DC | N-Channel 1.8-V (G-S) MOSFET With Schottky Diode | Vishay |
MOSFET |
N | 1 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
|
Si1039X | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 230 | - | 180 | 140 | - | 0.95 | 0.17 |
SC89-6 |
|
TSM802CQ | N-канальный MOSFET транзистор, 20 В, 6 А, ESD защита | Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 65 | 30 | - | 25 | - | 6 | 3.1 |
|
|
NTMD2P01R2 | Power MOSFET ?2.3 Amps, ?16 Volts Dual SOIC?8 Package | ON Semiconductor |
MOSFET |
P | 2 | -16 | - | - | 100 | 70 | - | -2.3 | 0.71 |
SOIC-8 |
|
IRLML6302 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 900 | 600 | - | 0.78 | 0.54 |
SOT-23-3 |
|
NTGS3441T1 | Power MOSFET 1 Amp, 20 Volts P?Channel TSOP?6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 69 | - | -1.65 | 0.5 |
|
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NTQD6968N | Power MOSFET 7.0 A, 20 V, Common Drain, Dual N?Channel, TSSOP?8 | ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 17 | - | 7 | 1.81 |
TSSOP-8 |
|
IRF7325 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 33 | 24 | - | 7.8 | 2 |
SOIC-8 |
|
MTP50P03HDL | Power MOSFET 50 Amps, 30 Volts, Logic Level P?Channel TO?220 | ON Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | - | - | 50 | 125 |
TO-220AB |
|
STC6NF30V | N-channel 30V - 0.020? - 6A - TSSOP8 2.5V-drive STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | 20 | - | 6 | 1.5 |
TSSOP-8 |