Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRF7752 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 36 | 30 | 4.6 | 1 |
TSSOP-8 |
|
IRF7706GPBF | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 36 | 22 | 7 | 1.51 |
TSSOP-8 |
|
IRF7755GPBF | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 86 | 51 | - | 3.9 | 1 |
TSSOP-8 |
|
Si3475DV | P-Channel 200-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1340 | 0.95 | 3.2 |
|
|
NTGD1100L | Power MOSFET 8 V, ±3.3 A, Load Switch with Level?Shift, P?Channel, TSOP?6 | ON Semiconductor |
MOSFET |
P | 2 | 8 | 80 | - | - | 40 | - | 3.3 | 0.83 |
|
|
SI3443DV | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 90 | 65 | - | 4.4 | 2 |
|
|
Si3430DV | N-Channel 100-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 148 | 1.8 | 1.14 |
|
|
Si3465DV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | - | 140 | 65 | 3 | 1.14 |
|
|
Si3442BDV | N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | - | - | 70 | 45 | - | 3 | 0.86 |
|
|
Si3424BDV | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 31.5 | 23 | 8 | 2.98 |
|
|
NTGS3441P | Power MOSFET ?20 V, ?3.16 A, Single P?Channel TSOP?6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 144 | 91 | - | -2.5 | 0.98 |
|
|
Si3853DV | P-Channel 20-V (D-S) Rated MOSFET with Schottky Diode | Vishay |
MOSFET |
P | 1 | 20 | - | - | 280 | 160 | - | 1.6 | 0.83 |
|
|
IRFTS8342TRPBF | Однокристальный n-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 29 | 19 | 8.2 | 2 |
|
|
IRF5850 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 220 | 135 | - | 2.2 | 0.96 |
|
|
IRF5801 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 2200 | 0.6 | 2 |
|
|
Si3493BDV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 34.7 | - | 28.4 | 23 | - | 8 | 2.97 |
|
|
IRF5802 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 1200 | 0.9 | 2 |
|
|
Si3433BDV | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 60 | - | 45 | 34 | - | 4.3 | 1.1 |
|
|
Si3458BDV | N-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 105 | 82 | 4.1 | 3.3 |
|
|
Si3437DV | P-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 61 | 1.4 | 3.2 |
|