Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF5806 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
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| IRF1902 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 170 | 85 | - | 4.2 | 2.5 |
SOIC-8 |
| IRLMS1902 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 170 | 100 | - | 3.2 | 1.7 |
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| IRF7501 | HEXFET Power MOSFETs Dual N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 200 | 135 | - | 2.4 | 1.2 |
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| IRF5850 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 220 | 135 | - | 2.2 | 0.96 |
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| IRLML2402 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 350 | 250 | - | 1.2 | 0.54 |
SOT-23-3 |
| IRLMS6702 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 375 | 200 | - | 2.4 | 1.7 |
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| IRF7504 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 400 | 270 | - | 1.7 | 1.25 |
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| IRLML6302 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 900 | 600 | - | 0.78 | 0.54 |
SOT-23-3 |
